Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Mäkelä, Jarno; Tuominen, M.; Yasir, Muhammad; Kuzmin, M.; Dahl, J.; Punkkinen, M.; Laukkanen, P.; Kokko, K.; Wallace, Robert M.

doi:10.1063/1.4928544

Cited by 8 publications

(3 citation statements)

References 30 publications

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“…We find this kind of similarity of desorption behavior unlikely for structures in which the difference is between Sb–(III/V) and O–(III/V) bonds in the topmost layers. Thus, we propose that either the O atoms are able to penetrate into the subsurface of the structure, similarly as in refs 42,44,45 [for GaSb/InSb(100)], and 46,47 [for Si(111) and (100)], or, that oxidation results in removal of In as In 2 O molecules and concomitant stabilization of (2 × 2)-Sb.…”

Section: Resultssupporting

confidence: 58%

Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä

Rad

Lehtiö

et al. 2018

Sci Rep

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Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum.

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Section: Resultssupporting

confidence: 58%

Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä

Rad

Lehtiö

et al. 2018

Sci Rep

Self Cite

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“…Many studies were dedicated to the thermal, anodic and plasma oxidation of III-V semiconductor [17]. Early works on anodic oxidation of GaSb [18,19] and on native oxide films [20] were pursued [21] and till now the oxidation process of GaSb is studied experimentally [22] and theoretically [23]. In a recent work, the role of H 2 O 2 and H 2 O in GaSb reduction-oxidation reactions was investigated in detail [24].…”

Section: Introductionmentioning

confidence: 99%

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Bomers

Barho

Milla-Rodrigo³

et al. 2018

J. Phys. D: Appl. Phys.

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Mid-IR localized surface plasmon resonances (LSPR) have been demonstrated in nano-ribbons of highly Si-doped InAsSb alloys on GaSb substrates. We show that the slow, steady and selective oxidation of GaSb in water leads to an all-semiconductor mid-IR pedestal configuration consisting of highly doped InAsSb plasmonic resonators on top of GaSb pedestals embedded in an amorphous oxide layer. The homogeneity of the pedestal structure is imaged with an attenuated-total reflection Fourier transform infrared (ATR-FTIR) microscope by measuring around the plasmonic excitation at the plasma wavelength of 5.5 µm. As the plasmonic properties are influenced by modifications of the surrounding medium, we show for all-semiconductor gratings with defined doping level and defined grating geometry, that the GaSb oxidation process allows post-fabrication targeting of mid-IR plasmonic resonances to cover the mid-IR range from 5 to 20 µm. Additionally the pedestal formation reduces the refractive index mismatch between the two interfaces of the plasmonic resonators which allows to exploit a second plasmonic peak and which favors plasmonic field enhancement at the top (air-) side of the structure relevant for enhanced molecular vibration spectroscopy.

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“…Further insight in the oxidation reaction mechanism at the semiconductor/oxygen interface was recently obtained by scanning tunneling microscopy measurements which exploited the controlled exposure of a clean GaSb surface to oxygen [25]. The research on the reaction mechanism at GaSb/ solution interfaces is ongoing and a recent study has shown that the redox processes are relevant for modifying the surface's electronic structure of GaSb during the reaction with an aqueous sodium sulfide solution [26].…”

Section: Introductionmentioning

confidence: 99%

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Bomers

Paola

Cerutti

et al. 2018

Semicond. Sci. Technol.

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The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb-water reaction kinetics by studying a model compound system consisting of a 50 nm thick GaSb layer on a 1000 nm thick highly Si-doped epitaxial grown InAsSb layer. Tracing of phonon modes by Raman spectroscopy over 14 h of reaction time shows that within 4 hours, the 50 nm of GaSb, opaque for visible light, transforms to a transparent material. Energy-dispersive X-ray spectroscopy shows that the reaction leads to antimony depletion and oxygen incorporation. The final product is a gallium oxide. The good conductivity of the highly Si-doped InAsSb and the absence of conduction states through the oxide are demonstrated by tunneling atomic force microscopy. Measuring the reflectivity of the compound layer structure from 0.3 µm to 20 µm and fitting of the data by the transfer-matrix method allows us to determine a refractive index value of 1.6 ± 0.1 for the gallium oxide formed in water. The investigated model system demonstrates that corrosion, i.e. antimony depletion and oxygen incorporation, transforms the narrow band gap material GaSb into a gallium oxide transparent in the range from 0.3 to 20 µm.

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Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Cited by 8 publications

References 30 publications

Crystalline and oxide phases revealed and formed on InSb(111)B

Crystalline and oxide phases revealed and formed on InSb(111)B

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

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