Bioactive and antibacterial coatings were developed and characterized in this study. Chitosan/gelatin/Ag-Mn doped mesoporous bioactive glass nanoparticles (Ag-Mn MBGNs) composite coatings (of 5-6 µm thickness) were deposited using electrophoretic deposition...

Biomedical implants are the need of this era due to the increase in number of accidents and follow-up surgeries. Different types of bone diseases such as osteoarthritis, osteomalacia, bone cancer, etc., are increasing globally. Mesoporous bioactive glass nanoparticles (MBGNs) are used in biomedical devices due to their osteointegration and bioactive properties. In this study, silver (Ag)- and strontium (Sr)-doped mesoporous bioactive glass nanoparticles (Ag-Sr MBGNs) were prepared by a modified Stöber process. In this method, Ag+ and Sr2+ were co-substituted in pure MBGNs to harvest the antibacterial properties of Ag ions, as well as pro-osteogenic potential of Sr2 ions. The effect of the two-ion concentration on morphology, surface charge, composition, antibacterial ability, and in-vitro bioactivity was studied. Scanning electron microscopy (SEM), X-Ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR) confirmed the doping of Sr and Ag in MBGNs. SEM and EDX analysis confirmed the spherical morphology and typical composition of MBGNs, respectively. The Ag-Sr MBGNs showed a strong antibacterial effect against Staphylococcus carnosus and Escherichia coli bacteria determined via turbidity and disc diffusion method. Moreover, the synthesized Ag-Sr MBGNs develop apatite-like crystals upon immersion in simulated body fluid (SBF), which suggested that the addition of Sr improved in vitro bioactivity. The Ag-Sr MBGNs synthesized in this study can be used for the preparation of scaffolds or as a filler material in the composite coatings for bone tissue engineering.

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Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

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