1994
DOI: 10.1016/0039-6028(94)91281-5
|View full text |Cite
|
Sign up to set email alerts
|

Oxidation of hydrogen-terminated Si surfaces studied by infrared spectroscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

1
27
0

Year Published

1995
1995
2024
2024

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 42 publications
(28 citation statements)
references
References 11 publications
1
27
0
Order By: Relevance
“…These studies suggested that the robustness of the Si NW hydride is a consequence of bending stress, where re-bonding of dangling bonds at the edge of two adjoining facets of a Si NW takes place. 5,22,23 To understand the relation between the strength of the Si-C bond and the oxidation resistance, ToF SIMS fragments of CH 3 -Si NWs and 2D CH 3 -Si(100) surfaces were collected after different exposure periods to oxidizing agents. Table 1 presents selected ToF SIMS spectrum peaks of CH 3 -Si NW before and after 4 days exposure to pure (499.9999% purity) O 2 (20%)-N 2 (80%) environment containing 10-15% RH.…”
Section: Results and Analysismentioning
confidence: 99%
“…These studies suggested that the robustness of the Si NW hydride is a consequence of bending stress, where re-bonding of dangling bonds at the edge of two adjoining facets of a Si NW takes place. 5,22,23 To understand the relation between the strength of the Si-C bond and the oxidation resistance, ToF SIMS fragments of CH 3 -Si NWs and 2D CH 3 -Si(100) surfaces were collected after different exposure periods to oxidizing agents. Table 1 presents selected ToF SIMS spectrum peaks of CH 3 -Si NW before and after 4 days exposure to pure (499.9999% purity) O 2 (20%)-N 2 (80%) environment containing 10-15% RH.…”
Section: Results and Analysismentioning
confidence: 99%
“…8 Nevertheless, the surface passivated by Si-H is not fully stable and silicon oxide appears within a few hours. 9 The chemical modication of the silicon surface with graed organic molecules could be interesting to improve its stability. 1 Furthermore, the graing of molecules on semiconductor surfaces can be used to achieve a one-step passivation and functionalization of the surface.…”
Section: Introductionmentioning
confidence: 99%
“…The appearance of the terminal oxide group (-O) suggests the formation of the SiO 2 from the full oxidation of the Si. 19 The exact ratio of SiO x and SiO 2 is not clear yet due to the unknown number x of SiO x .…”
mentioning
confidence: 99%