Oxidation of sputtered Zr thin film on Si substrate

Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

“…The lowest Q eff is attained sample oxidized/nitrided at 700°C (4.55 × 10 11 cm −2 ), which is lower than the value reported in Ref. [25] A hysteresis between forward and reverse bias of a C-V measurement is being detected in all samples. As explained by Tanner et al [26] and Dimitrijev et al, [27] the hysteresis may indirectly related to slow traps located at some distance from the interface.…”

“…[1][2][3] Of numerous investigated dielectrics or oxides, ZrO 2 is of interest as this oxide is having high enough κ value (22)(23)(24)(25), large bandgap (5.8-7.8 eV), good thermodynamic stability in contact with Si (up to ~900°C of processing temperature), and minimal lattice mismatch with Si(100). [1][2][3][4] The quality of ZrO 2 thin film is very much dependent on its deposition technique.…”

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

“…1. All of the investigated samples revealed that chemical bonding of Si-Si and Y-O was recorded at transmittance band of 606 cm −1 [10] and 455 as well as 562 cm −1 [51], respectively. Besides, transmittance bands located at around 468, 810, and 1100 cm −1 , which were related to the rocking, bending, and stretching modes of Si-O bonding, respectively, have been recorded [10].…”

“…Further scaling of SiO 2 will result in exceptionally high direct tunneling current and increase reliability issue [3][4][5]. Thus, numerous investigations have been performed to substitute the SiO 2 with high dielectric constant (k) materials, such as HfO 2 [6][7][8], Al 2 O 3 [9], ZrO 2 [10,11], CeO 2 [12], Er 2 O 3 [13,14], and Y 2 O 3 [4,. Of these high-k oxides, Y 2 O 3 is considered as one of the potential candidates for substituting SiO 2 due to its fascinating properties, such as large band gap (∼5.5 eV), large conduction band offset (∼2.3 eV), high-k value (k = 15-18), low lattice mismatch and good thermal stability with silicon [4,[15][16][17][18][19].…”

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

“…According to the International Technology Roadmap for Semiconductors [4] and several reports [3,5,6], as the oxide is thinned down to 1.2 nm, current directly tunneling through the oxide may increase tremendously. In order to overcome the aforementioned problem, high dielectric constant (Ä) gate has been proposed as an alternative gate dielectric.…”