Oxidation of the 8 × 8-reconstructed β-Si3N4(0 0 0 1) surface: A photoemission study

Flammini, R.; Wiame, Frédéric; Belkhou, Rachid; Carbone, Marilena; Trucchi, Daniele M.; Colonna, Stefano; Ronci, F.; Hajlaoui, Mahdi; Sirotti, Fausto

doi:10.1016/j.apsusc.2015.07.019

Cited by 8 publications

(1 citation statement)

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“…Besides, the surface of β‐Si 3 N 4 (0001) is only mildly affected by air exposure, and the nitride surface preserves its electronic properties (and that of the silicon substrate beneath) upon thermal oxidation. [ 19 ]…”

Section: Introductionmentioning

confidence: 99%

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)

Salimian

Xiang

Colonna

et al. 2020

Adv Materials Inter

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This work reports the first experimental study of graphene transferred on β‐Si3N4(0001)/Si(111). A comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene‐based devices is provided. The Si3N4 film is grown on Si(111) under ultra‐high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake is deposited on top of it by a polymer‐based transfer technique, and a Hall bar device is fabricated from the graphene flake. STM is employed again to study the graphene flake under UHV conditions after device fabrication and shows that the surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, reveal back gate modulation of carrier density in the graphene channel and show the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel is detected.

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Section: Introductionmentioning

confidence: 99%

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)

Salimian

Xiang

Colonna

et al. 2020

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

Structural, Mechanical, and Thermal Properties of β-Si3N4 under High Pressure

et al. 2016

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New design concept for stable α-silicon nitride based on the initial oxidation evolution at the atomic and molecular levels

Guo

Wang

Zhi

et al. 2022

Journal of Materials Science & Technology

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Oxidation of the 8 × 8-reconstructed β-Si3N4(0 0 0 1) surface: A photoemission study

Cited by 8 publications

References 42 publications

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)

Structural, Mechanical, and Thermal Properties of β-Si3N4 under High Pressure

New design concept for stable α-silicon nitride based on the initial oxidation evolution at the atomic and molecular levels

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Oxidation of the 8 × 8-reconstructed β-Si3N4(0 0 0 1) surface: A photoemission study

Cited by 8 publications

References 42 publications

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si3N4(0001)/Si(111)

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si3N4(0001)/Si(111)

Structural, Mechanical, and Thermal Properties of β-Si3N4 under High Pressure

New design concept for stable α-silicon nitride based on the initial oxidation evolution at the atomic and molecular levels

Contact Info

Product

Resources

About

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)

Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si₃N₄(0001)/Si(111)