2010
DOI: 10.1016/j.apsusc.2010.06.069
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Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

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Cited by 25 publications
(8 citation statements)
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“…Based on literature values we infer that all oxide thicknesses saturate after 10 3 -10 4 h [26], [35]. In our experiment, this time corresponds to the age of the reference sample at the time of measurement.…”
Section: Oxide Regrowthmentioning
confidence: 59%
“…Based on literature values we infer that all oxide thicknesses saturate after 10 3 -10 4 h [26], [35]. In our experiment, this time corresponds to the age of the reference sample at the time of measurement.…”
Section: Oxide Regrowthmentioning
confidence: 59%
“…1d,e and in the Methods Section). Due to oxidation, niobium films automatically form nanometer-thick amorphous oxide layers which act as a protective film 28 . Simulations confirm that the thin oxide layer serves no optical functionality.…”
Section: Resultsmentioning
confidence: 99%
“…Continuous niobium films are already obtained below a film thickness of 10 nm–at which traditional gold deposition approaches lead to isolated gold islands rather than compact films 19 20 . After deposition, niobium naturally forms a several-atom thick oxide protection layer, keeping the metallic film separated from the environment 28 . Here we show that this protection layer is so effective that the niobium remains plasmonically inert even if being exposed to aqueous solutions, making such ultrathin films particularly attractive for plasmon-mediated biosensing applications.…”
mentioning
confidence: 99%
“…The thermal conductivity increased with the addition of oxygen getter of Nb was identified with the oxygen contents in grain boundary. [19,39,40] In contrast, it was still ambiguous that the factor seemed to have been controlled not only by oxygen getter but also rather by other lattice defects related to nitrogen vacancies in the Si 3 N 4 lattice. Thus, we might conclude that the high temperature is helpful to remove the oxygen in the lattice of Si 3 N 4 and make the grain of Si 3 N 4 growth well, leading to the high thermal conductivity.…”
Section: Thermophysical and Mechanical Properties Of Si 3 Nmentioning
confidence: 99%