2013
DOI: 10.1016/j.apsusc.2012.10.161
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Oxidative pit formation in pristine, hydrogenated and dehydrogenated graphene

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Cited by 9 publications
(15 citation statements)
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“…The hole outlined with a red dotted line in We now turn to a discussion of our results above. The anisotropically etched edges in our work are consistently armchair-oriented, in contrast to the zigzag-oriented edges or isotropic holes reported previously for oxidative graphene etching [19][20][21][22][23][24][25] and remote hydrogen plasma etching. 30,31 Vacuum annealing graphene at high temperatures in situ in the TEM has previously been reported to result in primarily armchair edges.…”
Section: Resultssupporting
confidence: 54%
See 1 more Smart Citation
“…The hole outlined with a red dotted line in We now turn to a discussion of our results above. The anisotropically etched edges in our work are consistently armchair-oriented, in contrast to the zigzag-oriented edges or isotropic holes reported previously for oxidative graphene etching [19][20][21][22][23][24][25] and remote hydrogen plasma etching. 30,31 Vacuum annealing graphene at high temperatures in situ in the TEM has previously been reported to result in primarily armchair edges.…”
Section: Resultssupporting
confidence: 54%
“…17 To date however, different groups have variously reported the process to result in holes with armchair, 18 zigzag [19][20][21][22] or isotropically etched edges. [23][24][25] The substrate in particular has been shown to affect the morphology of the etched structures. In one study (Ref.…”
mentioning
confidence: 99%
“…Based on the DFT calculation results, a two‐step mechanism for oxidation of graphene has been proposed: When exposed to O 2 , (1) the bare vacancies in graphene are quickly saturated by ether and carbonyl groups and (2) the ether and carbonyl groups at the defect sites further activate the dissociation of O 2 leading to the formation of larger lactone groups, which could directly desorb CO or CO 2. This two‐step oxidation process leads to the etching of graphene with the formation of pits, as observed in recent experiments …”
Section: Group IV Elemental Monolayers: Graphene Silicene and Germasupporting
confidence: 62%
“… Li et al . have shown oxidation induced strong hole doping in graphene at temperature from 200 to 300°C as revealed by Raman spectra, and the formation of etching pits at 500°C in O 2 /Ar gas flow for 2 h as seen in Figure …”
Section: Group IV Elemental Monolayers: Graphene Silicene and Germamentioning
confidence: 95%
“…(4) The above formulated interpretation (model) is direct opposite to the supposition (model) of a number of researchers, those believe in occurrence of hydrogen desorption (dehydrogenation) processes, mainly, from the external epitaxial graphene surfaces.And it is direct opposite to the supposition -model of many scientists that the diffusion of hydrogen along the graphenesubstrate interface is negligible. (5) In this connection, it is expedient to take into account also some other related experimental results, for instance (Stolyarova et al, 2009;Riedel et al, 2009;Riedel et al, 2010;Goleret al, 2013;Jones et al, 2012;Lee et al, 2012), on the peculiarities of the hydrogenationdehydrogenation processes in epitaxial graphenes, particularly, in the graphene-substrare interfaces.…”
Section: On the Thermodynamic Characteristics And Atomic Mechanisms Omentioning
confidence: 99%