Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO&lt;inf&gt;2&lt;/inf&gt;-NT/Au structure

Дорошева, И. Б.; Вохминцев, А. С.; Камалов, Р. В.; Gryaznov, A. O.; Weinstein, I. A.

doi:10.1109/usbereit.2018.8384604

Cited by 4 publications

(2 citation statements)

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“…When preparing TiO x nanotubes by the anodic oxidation, a mixed solution of C 2 H 6 O 2 and NH 4 F was widely used as the electrolyte. Dorosheva et al [72] oxidized Ti at 10 V for 5-20 min in C 2 H 6 O 2 and C 3 H 8 O 3 containing 1 wt.% NH 4 F, and obtained nanotubes (NTs) with an outer diameter of approximately 45 nm and varying lengths. Ti/TiO x nanotube/Au memristors were fabricated after sputtering Au as the top electrodes.…”

Section: Nano-tubular Memristorsmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

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Owing to the advantages of simple structure, low power consumption and high-density integration, memristors or memristive devices are attracting increasing attention in the fields of next generation nonvolatile memories, neuromorphic computation and data encryption, etc. However, the deposition of memristive films often requires expensive equipment and strict vacuum conditions, the process consumes high energy, and it is also very time–consuming. In contrast, electrochemical anodizing can produce metal oxide films quickly (e.g. in 10 s) under ambient conditions. By means of the anodizing technique, oxide films, oxide nanotubes, nanowires and nanodots can be fabricated to prepare memristors. Through adjusting oxidation parameters such as voltage, current and time, oxide film thickness, nanostructures, defect concentrations, etc., can be varied to regulate device performances. Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency, low variation, and ultra–high yield rate. This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors. Firstly, the principle of anodic oxidation is introduced; then different types of memristors produced by the anodic oxidation are presented; finally, features and challenges of the anodic oxidation for memristor production are elaborated.

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Section: Nano-tubular Memristorsmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

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“…An oxygen deficiency increase in various oxide structures during their synthesis can be achieved by the method of electrochemical oxidation through fitting conditions and anodizing parameters [22,41,[42][43][44][45][46]. In particular, it was shown in [41,42,[47][48][49][50][51][52][53] that MDM structures based on nanotubular layers of non-stoichiometric TiO 2-x, obtained by the anodization technique, are breakthrough materials as memristor memory cells.…”

Section: Introductionmentioning

confidence: 99%

Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

et al. 2021

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The prospects of the development of non-volatile memory elements that involve memristive metal-dielectric-metal sandwich structures are due to the possibility of reliably implementing sustained functional states with quantized conductance. In the present paper, we have explored the properties of Zr/ZrO2/Au memristors fabricated based on an anodic zirconia layer that consists of an ordered array of vertically oriented non-stoichiometric nanotubes with an outer diameter of 30 nm. The operational stability of the designed memory devices has been analyzed in unipolar and bipolar resistive switching modes. The resistance ratio ≥105 between high-resistance (HRS) and low-resistance (LRS) states has been evaluated. It has been found that the LRS conductivity is quantized over a wide range with a fundamental minimum of 0.5G 0 = 38.74 μS due to the formation of quantum conductors based on oxygen vacancies (VO). For Zr/ZrO2/Au memristors, resistive switching mechanisms to be sensitive to the migration of VO in an applied electric field have been proposed. It has been shown that the ohmic type and space-charge-limited conductivities are realized in the LRS and HRS, respectively. Besides, we have offered a brief review of parameters for functional metal/zirconia/metal nanolayered structures to create effective memristors with multiple resistive states and a high resistance ratio.

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