Oxide Phosphors For Full-color Tfel Display

Minami, Tadatsugu; Kuroi, Yoshihiro; Yamada, Hideshi; Takata, Shigeo; Miyata, Toshihiro

doi:10.1109/asid.1997.631403

Cited by 5 publications

(4 citation statements)

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“…It should also be noted that the Mn doping level remains to be optimized in these films, which should further enhance their performance. In PL phosphors, the optimum doping level has been determined to lie in the range of 0.5-0.6%, 16,29 depending on the stoichiometry, while the optimum level in TFEL devices was determined to be in the range of 1-2% by Minami et al 30 ERD analysis of the films determined the doping level at 3%, vs. 2% in the targets. The brightness-voltage characteristics of these films is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

ZnGa[sub 2]O[sub 4]:Mn phosphors for Thin-Film Electroluminescent Displays Exhibiting Improved Brightness

Flynn

Kitai

2001

J. Electrochem. Soc.

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Thin films of ZnGa2O4:normalMn films have been deposited by radio frequency magnetron sputtering in order to study the effects of annealing temperatures less than 1000°C on the thin-film electroluminescent properties. Energy-dispersive X-ray compositional analysis showed a loss of zinc during sputtering, with the film composition being Zn0.9Mn0.03Ga2O4. All films showed strong (111) and (222) X-ray reflections relative to the power standard. As the annealing temperature was raised, the texture rotated toward that of the powder material. The as-deposited films showed no photoluminescence; however, once annealed at T⩾750°C, a single emission band at 504 nm was observed. Emission wavelength was independent of annealing temperature. The electroluminescent brightness of the devices peaked at an annealing temperature of 900°C. Peak brightness and efficiency were 350 normalcd/m2 and 0.55 lm/W at 60 Hz, and 1500 normalcd/m2 and 0.30 lm/W at 600 Hz. These high brightness values have been attributed to the roughness of the substrates. © 2001 The Electrochemical Society. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

ZnGa[sub 2]O[sub 4]:Mn phosphors for Thin-Film Electroluminescent Displays Exhibiting Improved Brightness

Flynn

Kitai

2001

J. Electrochem. Soc.

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“…Ga 2 O 3 has been previously activated with Mn 2+ [2], Cr 3+ [3] and Eu 3+ [4,5]. Generally, the brightest and most efficient rf sputtered films were amorphous.…”

Section: Introductionmentioning

confidence: 99%

4.2: High Brightness Red Emitting Ga₂O₃: Eu Electroluminescent Phosphor

Stodilka

Kitai

Huang

et al. 2000

Symp Digest of Tech Papers

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“…8 One of the promising oxide phosphors investigated by several groups is the well-known green emitting Zn 2 SiO 4 :Mn. [8][9][10] In addition, both Duan et al 11 and Minami et al 12 found that substituting Ge for Si lowered the required processing temperature while still yielding good EL characteristics. Therefore in this study, pure Zn 2 GeO 4 :Mn was investigated as a TFEL phosphor using a traditional TFEL structure and a glass substrate.…”

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confidence: 99%