2020
DOI: 10.1109/led.2020.2972038
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Oxide Synaptic Transistors Coupled With Triboelectric Nanogenerators for Bio-Inspired Tactile Sensing Application

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Cited by 58 publications
(44 citation statements)
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“…[21] When the gate voltage is applied in the form of electric pulses, each pulse injects a certain amount of ions into the channel, inducing extra carriers in the channel and then a gradual increase in the channel conductance with the number of pulses ( Figure 4d). [67,68] Based on these unique properties, various applications of IGTs have been explored, including neuromorphic computing, [11,69] chemical and physical sensors, [70,71] neural interfaces, [72] artificial sensing, [73][74][75] printed circuits, [25] electronic skins, [76] and human-machine interactions. [77]…”
Section: Electrical Characteristicsmentioning
confidence: 99%
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“…[21] When the gate voltage is applied in the form of electric pulses, each pulse injects a certain amount of ions into the channel, inducing extra carriers in the channel and then a gradual increase in the channel conductance with the number of pulses ( Figure 4d). [67,68] Based on these unique properties, various applications of IGTs have been explored, including neuromorphic computing, [11,69] chemical and physical sensors, [70,71] neural interfaces, [72] artificial sensing, [73][74][75] printed circuits, [25] electronic skins, [76] and human-machine interactions. [77]…”
Section: Electrical Characteristicsmentioning
confidence: 99%
“…Maximum retention IGT 10 000 [140] 5 ns [68] 1.23 fJ [159] Low Low 10 9 [137,160] >25 h [161] RRAM 64 [162] 85 ps [163] 115 fJ [164] High High 10 12 [165,166] >1000 years @ RT [167] PCM 16 [168,169] 700 ps [170] 1 pJ [171] High High 10 11 [172] >1000 years @ RT [173] FTJ/FeFET %10 [123,174,175] 10 ns [174] 100 fJ [174] High High 4 Â 10 6 [175] %3 days [176] MTJ/STT-MRAM 2 [177,178] 200 ps [179] 10 fJ [180] High High 10 12 [181] 10 years @ RT [182] MOSFET 2 [183] <10 0 ns (SRAM) <10 1 ns (DRAM) [183] %1-10 fJ [183] High High >10 16 [183] %1-10 ns [183] and an IGT (Figure 9b). [75] The pressure sensor TENG is made by assembling a silk fibroin/indium tin oxide (ITO)/ polyethylene terephthalate (PET) film with another untreated ITO/PET film through adhesive tape. IGTs are prepared on ITO/glass substrates with indium gallium zinc oxide (IGZO) as the channel and ITO as the electrode material.…”
Section: Near-sensor Computingmentioning
confidence: 99%
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“…In addition to the above reviewed progress, we have also seen rapid advances in developing the bio-derived natural materials based triboelectric devices for other functional applications. [50,60,107,117,334] For example, Luo et al [50] reported a flexible smart ping-pong table based on wood TENG. The TENGs built with hot-pressed wood materials can obtain a ≈70% enhancement compared with the devices made from natural wood.…”
Section: Challenges and Opportunitiesmentioning
confidence: 99%
“…Zhang et al recently demonstrated a tactile-sensing element based on a silk-based TENGs and chitosan-based electrolyte-gated synaptic transistors (EGT) for biological tactile sensory neuron emulation. [107] Here, TENG was used to convert the pressure signals into voltage pulses, and EGT was used as a neuromorphic device for emulating biological synapse behaviors, which successfully simulated the ability of spiders to recognize prey by the vibration of spider webs. This work demonstrates the application prospect of bio-TENG based neuromorphic elements in future artificial intelligence and bionic technology.…”
Section: Challenges and Opportunitiesmentioning
confidence: 99%