Oxide thickness measurements up to 120 Å on silicon and aluminum using the chemically shifted auger spectra

Chang, C. C.; Boulin, D.M.

doi:10.1016/0039-6028(77)90122-4

Cited by 67 publications

(17 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The convention used here to determine the interface width was to define the apparent width as two times the depth spanned in the profile between 85 and 50% of the "bulk" oxygen signal. It is inconceivable that the broadening factors are less for the present systems, because these factors were minimally small for the Si systems (9). (9) for the reasons for adoption of this convention, which provides the most reliable estimate of the width from the depth profiles and minimizes errors from ion milling artifacts, etc.].…”

Section: Item (V): Obtaining Simultaneous Peak Heights--mentioning

confidence: 99%

“…The interface width as a function of oxide thickness is plotted in Fig. Data from SiO2-Si interfaces (9) indicate that use of the apparent symmetric mean width of the oxygen profile leads to a broadening factor of at least 30A. The convention used here to determine the interface width was to define the apparent width as two times the depth spanned in the profile between 85 and 50% of the "bulk" oxygen signal.…”

Section: Item (V): Obtaining Simultaneous Peak Heights--mentioning

confidence: 99%

See 1 more Smart Citation

Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis

Chang¹,

Chang²,

Murarka³

1978

J. Electrochem. Soc.

View full text Add to dashboard Cite

Plasma oxidation of GaAs is a low temperature oxide growth technique with possible electronics device applications. Chemical depth profiles through 600-3000A thick plasma-grown oxides were obtained using Auger spectroscopy combined with ion milling and were calibrated using neutron activation analysis. The "bulk" compositions of these oxides were uniform with depth and equivalent to those of mixtures of Ga203 and As2Os. Approximately the first 200A of the oxide surfaces were always As-rich, but each oxide as a whole was As deficient and the Ga/As concentration ratio increased with oxide thickness from 1.1s at 600A to 1.45 at 2780A. The mechanism of As loss is the faster out-diffusion of As compared to Ga during oxidation and volatilization of surface As-containing species. A sheet of elemental As, amounting to about I0 TM atoms/cm2/1000A of oxide growth, was found at the oxide-GaAs interface. The interface widths were <~30 and <~70A at oxide thicknesses of 600 and 2780A, respectively.

show abstract

Section: Item (V): Obtaining Simultaneous Peak Heights--mentioning

confidence: 99%

Section: Item (V): Obtaining Simultaneous Peak Heights--mentioning

confidence: 99%

Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis

Chang¹,

Chang²,

Murarka³

1978

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…15 Quantitation in AES is relatively simple because all Auger sensitivity factors are within a factor of 20 of each other. One example was discussed above.…”

Section: Quantitative Compositional Analysismentioning

confidence: 99%

Advances In Analytical Auger Electron Spectroscopy

Chang¹

1987

MRS Bull.

View full text Add to dashboard Cite

Fundamental principles and experimental procedures for fully utilizing the power of Auger analysis are discussed. Topics include: quantitative analysis, high resolution imaging, depth profiling, and noise reduction. These studies reveal several improvements that might be expected in the immediate future and how they might be achieved. Some knowledge of Auger spectroscopy is assumed, but references on theory, principles, instrumentation, and applications are cited.

show abstract

“…[2]. The intensity of the Pt(1967) transition from the PtWOs phase Ipt(B) can be written in terms of Ipt (Pt) as Ipt(B) = aIpt(Pt)K2 [9] where K2 is defined as the ratio of the volume concentration of platinum in PtWO8 to that of metallic platinum or K2 = ~ = 0.26 [10] aB 3…”

Section: Op = ~ a [2]mentioning

confidence: 99%

Electrocatalytic Activity of Cubic Sodium Tungsten Bronze: II . Effects of Intentional Platinization

Bevolo¹,

Weber²,

Shanks³

et al. 1981

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper is an extension of the work reported in the preceding paper (1) and concerns the effects of intentional platinization of sodium tungsten bronze electrodes on their electrocatalytic activity for oxygen reduction in an acid electrolyte. Some of these electrodes had activities and stabilities at 10 -8 h/cm 2 better than those for bulk platinum electrodes measured in the same solutions. The samples were prepared by three separate techniques and were characterized by SEM, cyclic voltammetry, x-ray dispersive analysis, Auger surface measurements, depth profiles, and microprobe analysis. Two types of platinum morphology were produced. The first type consisted of 1000-3000A platinum particles attached to a platinum-free bronze surface. For platinum coverages op less than a few percent the activity of the electrodes was proportional to op. The apparent activity per platinum atom was higher than that of bulk platinum although surface roughening effects made it difficult to quantify the specific activity of these electrodes. For op approaching 10% there was a large unexplained increase in activity. The second type of platinum morphology is best viewed as layer of PtWO3 on top of the bronze surface. These electrodes failed to exhibit any Pro reduction peak even though the Auger results indicated platinum atoms were present. In some cases, it was found that the activity per atom was as good as that of bulk platinum and that these electrodes had better long-term stability than bulk platinum. In all cases the bronze provided: (i) a corrosion resistance support, (ii) a good lattice matrix for either the growth of platinum particles or the incorporation of PtWO3 layers, and (iii) an electronic environment comparable to bulk platinum with its large density of states near the Fermi level. Techniques used in this study could provide the basis for construction of an economical fuel cell cathode.

show abstract

Oxide thickness measurements up to 120 Å on silicon and aluminum using the chemically shifted auger spectra

Cited by 67 publications

References 21 publications

Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis

Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis

Advances In Analytical Auger Electron Spectroscopy

Electrocatalytic Activity of Cubic Sodium Tungsten Bronze: II . Effects of Intentional Platinization

Contact Info

Product

Resources

About