Abstract:The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed h… Show more
“…One driver for such reasoning is recognition that the line spacing dimension between adjacent interconnects is approaching 100 nm. Hence, issues affecting the intrinsic reliability in BEOL dielectrics show some similarity to the gate oxide reliability concerns that existed during the early years of integrated circuit development [55]. This line of inquiry has led to the formulation of a number of basic and technologically important questions.…”
Section: B Concerns Dominated By Interface Defect Control: Time-depementioning
Multiple new materials are being adopted by the semiconductor industry at a rapid rate for both semiconductor devices and packages. These advances are driving significant investigation into the impact of these materials on device and package reliability. Active investigation is focused on the impact of back-end-of-line (BEOL) processing on Cu/low-k reliability. This paper discusses Cu/low-k BEOL interfacial reliability issues and relates key items from the assembly process and packaging viewpoint that should be managed in order to prevent adverse assembly impact on BEOL interfacial reliability. Reliability failure mechanisms discussed include interface diffusion-controlled events such as the well-known example of Cu electromigration (EM), as well as stress-migration voiding. Interface defectivity impact on dielectric breakdown and leakage is discussed. Lastly, assessments of assembly impact on these Cu/low-k interfacial concerns are highlighted.
“…One driver for such reasoning is recognition that the line spacing dimension between adjacent interconnects is approaching 100 nm. Hence, issues affecting the intrinsic reliability in BEOL dielectrics show some similarity to the gate oxide reliability concerns that existed during the early years of integrated circuit development [55]. This line of inquiry has led to the formulation of a number of basic and technologically important questions.…”
Section: B Concerns Dominated By Interface Defect Control: Time-depementioning
Multiple new materials are being adopted by the semiconductor industry at a rapid rate for both semiconductor devices and packages. These advances are driving significant investigation into the impact of these materials on device and package reliability. Active investigation is focused on the impact of back-end-of-line (BEOL) processing on Cu/low-k reliability. This paper discusses Cu/low-k BEOL interfacial reliability issues and relates key items from the assembly process and packaging viewpoint that should be managed in order to prevent adverse assembly impact on BEOL interfacial reliability. Reliability failure mechanisms discussed include interface diffusion-controlled events such as the well-known example of Cu electromigration (EM), as well as stress-migration voiding. Interface defectivity impact on dielectric breakdown and leakage is discussed. Lastly, assessments of assembly impact on these Cu/low-k interfacial concerns are highlighted.
“…where I͑t͒ is the off-current, which can be directly extracted from the decaying exponentials model, 11  is the tunneling parameter, t is the time for a given I͑t͒, q is the electron charge, and A is the area of the MOS capacitor. The position of the tunneling front x can be calculated according to 12…”
Section: Current-time "I -T… Measurementsmentioning
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“…In particular, papers were given by Dumin who reviewed oxide breakdown, distinguished hard and soft breakdown for various applications of oxides, described trap generation, and ultimately oxide reliability; much of this work has been described in an excellent recent review. 24 Lenahan described work that extended the initial work of Poindexter regarding P b1 defects 25,26 and their relationship to oxide leakage currents. Another invited talk was given by Cheung, one of the leaders in understanding the effects of charge damage to oxides during plasma processes.…”
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