2001
DOI: 10.1142/s0129156401000988
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Oxide Wearout, Breakdown, and Reliability

Abstract: The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed h… Show more

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Cited by 21 publications
(20 citation statements)
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References 590 publications
(735 reference statements)
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“…One driver for such reasoning is recognition that the line spacing dimension between adjacent interconnects is approaching 100 nm. Hence, issues affecting the intrinsic reliability in BEOL dielectrics show some similarity to the gate oxide reliability concerns that existed during the early years of integrated circuit development [55]. This line of inquiry has led to the formulation of a number of basic and technologically important questions.…”
Section: B Concerns Dominated By Interface Defect Control: Time-depementioning
confidence: 98%
“…One driver for such reasoning is recognition that the line spacing dimension between adjacent interconnects is approaching 100 nm. Hence, issues affecting the intrinsic reliability in BEOL dielectrics show some similarity to the gate oxide reliability concerns that existed during the early years of integrated circuit development [55]. This line of inquiry has led to the formulation of a number of basic and technologically important questions.…”
Section: B Concerns Dominated By Interface Defect Control: Time-depementioning
confidence: 98%
“…where I͑t͒ is the off-current, which can be directly extracted from the decaying exponentials model, 11 ␤ is the tunneling parameter, t is the time for a given I͑t͒, q is the electron charge, and A is the area of the MOS capacitor. The position of the tunneling front x can be calculated according to 12…”
Section: Current-time "I -T… Measurementsmentioning
confidence: 99%
“…In particular, papers were given by Dumin who reviewed oxide breakdown, distinguished hard and soft breakdown for various applications of oxides, described trap generation, and ultimately oxide reliability; much of this work has been described in an excellent recent review. 24 Lenahan described work that extended the initial work of Poindexter regarding P b1 defects 25,26 and their relationship to oxide leakage currents. Another invited talk was given by Cheung, one of the leaders in understanding the effects of charge damage to oxides during plasma processes.…”
Section: The Early Years: 1902 To 1977mentioning
confidence: 99%