Oxygen annealing induced crystallization and cracking of pulsed laser deposited Ga2O3 films

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

“…Growing a 200 nm thick Ga 2 O 3 film directly on the substrate generates a higher internal stress than preferentially growing a 20 nm thick film. Thin film stress often leads to lattice distortion and grain boundary distortion, which in turn affects the crystal structure and crystal defects of the film [28]. The presence of the seed layer plays a vital role in enhancing the recrystallization process of amorphous Ga 2 O 3 during the secondary film deposition and subsequent high-temperature post-annealing treatment.…”

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

“…Simultaneously, in addition to the diffraction peak of Al 2 O 3 (006) at 2 θ ∼ 41.67°, the corresponding K β Bragg reflection at 2 θ ∼ 31.34° is also captured. 32 XRD analysis reveals that the (002) plane of wz-GaN is parallel to the β-Ga 2 O 3 (2̄01) plane, which can be recorded as β-Ga 2 O 3 (2̄01)‖wz-GaN(002). 14 Fig.…”

Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template

“…[21,22] Extensive studies of the thermal annealing effects on phase transformation in Ga 2 O 3 grown using various deposition processes on sapphire and 4H-SiC substrates have been performed. Thermal annealing of Ga 2 O 3 causes an incomplete phase transformation, [23] mixed phases, [24] mixed planes of β-phase, [25] thin films cracking, [26] and atomic diffusion from substrates as discussed in the supporting information. As a result, thermal annealing is not a suitable option for achieving phase pure β-Ga 2 O 3 grown on hexagonal materials.…”