“…Defect engineering is mainly used in the gas detection of metal oxide gas sensors such as ZnO, TiO 2 , SnO 2 , In 2 O 3 , WO 3 , CuO and Fe 2 O 3 . [15][16][17] Defects (e.g., grain boundaries, cation vacancies and dopants) would generate intermediate bands, thus regulating the carrier concentration; 18 more notably, electron-deficient defects as active sites contribute to adsorbing and activating gas molecules. 19 Besides, the construction of heterojunctions at the interface of MOs can promote carrier transfer due to differences in band gap structures, and consequently increase the carrier concentrations on the MO surfaces (e.g., p-Co 3 O 4 /n-In 2 O 3 , n-TiO 2 /n-SnO 2 and p-CuO/p-NiO).…”