The presence of surface oxygen vacancies over oxide semiconductors plays a versatile role in the development of light-driven organic degradation and energy production. Simultaneously, the role of defect sites successfully forms an ideal model for the photocatalytic responsiveness over BiVO 4 -OV in the NIR region.With the development of industrialization and rapid growth of the population, the global energy crisis and the serious problems accompanying combustion of fossil fuels threaten our environment, climate and human health.1 Therefore, we suggest that a simple and efficient strategy can effectively solve aforementioned problems, that is quite important but challenging.2 The sustainable and environmentally friendly lightdriven technologies have obtained considerable interdisciplinary attention in recent years. At present, metal oxide semiconductors as efficient catalysts for H 2 production from water splitting and using solar light energy for the degradation of environmental pollutants have been investigated for various potential applications because of their high thermal conductivity, high chemical stability and low environmental toxicity. As previous report, the photocatalysts such as MoS 2 , ZnSnO 3 , g-C 3 N 4 and 3C-SiC, 3 were demonstrated profound improvement of its photocatalytic activity. They hold a great promise to realize the fast pollutant degradation and efficient energy generation via utilizing solar energy. However, sunlight basically consists of 44% visible light, 3% ultraviolet and the remainder infrared light.4 Unfortunately, the most of conventional photocatalysts only can utilize UV or/and visible light to achieve the solar-tochemical energy conversion.5 To overcome the grant challenge, we tried best to effectively broaden the optical window of conventional photocatalysts and endow them with considerable utilization efficiency of near infrared light. This kind of photocatalysts could realize the remarkable enhancement of photocatalytic activity. Besides, the main limitation of energy conversion originates from two bottlenecks. They are poor transition probability of photoexcited electrons to the conduction band under solar light illumination and serious photogenerated electron-hole recombination. In order to solve the problems, it is very important for the researchers to seek a desirable material that could improve fundamentally properties of the sunlight harvesting and the carrier separation/ transmission.To date, only a few photocatalytic materials were reported that can efficiently utilize NIR light to achieve the pollutant decomposition and the clean energy production. In the regard, upconversion material doped photocatalyst, narrow band gap photocatalyst and plasmon-assisted photocatalyst, have been successfully presented to improve the photocatalytic activity.
6However, some photocatalytic materials still suffer from intrinsic drawbacks. For instance, the applications of narrowband gap photocatalysts are severely restricted owing to their inappropriate energy band positions lead to...