2015
DOI: 10.1039/c5sc00423c
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Oxygen deficient α-Fe2O3 photoelectrodes: a balance between enhanced electrical properties and trap-mediated losses

Abstract: Intrinsic doping of hematite through the inclusion of oxygen vacancies (VO) is being increasingly explored as a simple, low temperature route to preparing active water splitting α-Fe2O3–x photoelectrodes.

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Cited by 95 publications
(91 citation statements)
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References 53 publications
(150 reference statements)
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“…Only a small fraction of the photogenerated holes are being transferred to the cocatalyst, likely due to the higher rate of recombination of electron−hole pairs in the hematite film close to the surface. 22,24,25 This is consistent with the TPC results described later on, which indicate there is no difference in the amount of charge available at the surface for the air-treated films before and after treatment with the cocatalyst. The rate of recombination within the hematite structure is therefore the limiting factor in these functionalized films.…”
Section: ■ Results and Discussionsupporting
confidence: 92%
“…Only a small fraction of the photogenerated holes are being transferred to the cocatalyst, likely due to the higher rate of recombination of electron−hole pairs in the hematite film close to the surface. 22,24,25 This is consistent with the TPC results described later on, which indicate there is no difference in the amount of charge available at the surface for the air-treated films before and after treatment with the cocatalyst. The rate of recombination within the hematite structure is therefore the limiting factor in these functionalized films.…”
Section: ■ Results and Discussionsupporting
confidence: 92%
“…Transient absorption (TA) spectroscopy has been used extensively to understand the processes that govern the relaxation dynamics of photoexcited electrons and holes and has been successfully applied to the study of midgap states in metal oxides (21,22,26,27,(30)(31)(32)(33)(34). By studying highly defected materials and modeling the TA decay as a function of defect concentration, time, and excitation wavelength, a more detailed understanding of the dominant charge carrier relaxation processes can be obtained (22)(23)(24).…”
Section: Significancementioning
confidence: 99%
“…We focus on understanding the influence of the reduction process on the activation of the hematite/FTO diffused junction and elucidating the mechanism of charge separation/transport in the bulk and at the underlayer interface. Previously, transient absorption spectroscopy (TAS), 27 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 5 solution and 16 mL DI water were transferred into a 20 mL PTFE lined stainless steel autoclave, where a FTO substrate was put at the bottom with the conductive side facing …”
mentioning
confidence: 99%
“…26 interface. 27 In parallel, to address the "dead layer" effect at the hematite/substrate interface, [28][29] ultrathin Ga 2 O 3 , 30 SiO x , 31 TiO 2 ,32 or Nb 2 O 5 33 buffer layer has been employed as growth directing agent 28 or interface passivation layer for hematite 34 . But the diffusion of high valence metal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 4 atoms from the buffer layer or substrate into hematite lattice is possible, 16, 35 which would form a diffused layer/junction.…”
mentioning
confidence: 99%