Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

Abstract

The effect of dopant-type, antimony (Sb), arsenic (As), and boron (B), on the outdiffusion of oxygen in heavily doped Czochralski (Cz) silicon wafers has been investigated using secondary ion mass spectroscopy. The results indicate that, although oxygen diffusion in Cz silicon is retarded in heavily B- and As-doped wafers during low temperature annealing (800 °C), it is not influenced by heavy Sb doping. This indicates that charge effects and atom size effects have negligible influence on the diffusion of oxygen. The B and As diffusion retardation effect is attributed to the existence of dopant-oxygen complexes. The oxygen solubility was largest in the most heavily B-doped samples annealed at low temperature.

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

“…The BF and DF images taken under two beam condition for (004) show pronounced strain contrast making it difficult to unambiguously determine the shape of the precipitate. In contrast, the images taken under two beam condition for (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) clearly reveal that the precipitate has a plate-like character and lies on the (001) plane. From the smallest width of the contrast, the thickness of the precipitates can be roughly estimated.…”

“…In highly doped material with dopant concentrations exceeding the O concentration by about one order of magnitude, the precipitation behavior changes again as function of the dopant, the dopant concentration, and the temperature. For highly boron (B) doped (pþ) material, the nucleation rate is found to be enhanced, [13][14][15][16] whereas the growth kinetics is reported to be unaffected at 1050 C. 15 The high density can be explained by several approaches like an enhancement of the density of nucleation sites in pþ material due to the presence of, e.g., B 2 O 3 complexes. 14,17 Alternatively, the O diffusivity in pþ material might even be further enhanced in the low temperature nucleation regime.…”

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

“…The experimental results of these SIMS investigations are summarized in Table 1. High concentrations of boron, antimony and arsenic have been shown to retard oxygen transport at certain temperatures [12,13]. None of these studies show that high concentrations of any of these elements enhance oxygen transport in as-grown material.…”

“…The effect of a high concentration of various shallow dopants on oxygen transport has been studied [11][12][13]. The experimental results of these SIMS investigations are summarized in Table 1.…”

Oxygen diffusivity in silicon derived from dynamical X-ray diffraction

“…However in the temperature range below 700 C 2-5 as well as for highly doped materials [6][7][8] the diffusivity has been found to be different from the values extrapolated with Eq. (1).…”