Oxygen diluted hexamethyldisiloxane plasmas investigated by means of<i>in situ</i>infrared absorption spectroscopy and mass spectrometry

Magni, D.; Deschenaux, Ch.; Hollenstein, Ch.; Creatore, Adriana Adriana; Fayet, Pierre

doi:10.1088/0022-3727/34/1/315

Cited by 101 publications

(100 citation statements)

References 15 publications

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“…þ (m ¼ 73 amu) and the neutral radical SiO(CH 3 ) 3 (m ¼ 89 amu), as reported also by Magni et al [11] The presence of other dissociation products can be detected but with lower intensities, therefore the Si 2 O(CH 3 ) þ 5 ion can be considered the most abundant charged species in the HMDSO dissociation process and a marker of the presence of unreacted HMDSO in the gas phase. As expected, the oxygen introduction and plasma ignition lead to the formation of several other species due to dissociation and combustion reaction.…”

Section: Resultssupporting

confidence: 66%

SiOx‐Based Multilayer Barrier Coatings Produced by a Single PECVD Process

Patelli¹,

Vezzù²,

Zottarel³

et al. 2009

Plasma Processes & Polymers

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Multilayer organic/inorganic gas barrier coatings on plastics are needed for high performance demanding applications from OLEDs to packaging. In order to simplify the multilayer deposition process, we developed a single step vacuum process where silicon oxide‐based PECVD multilayers are obtained by the modulation of the hexamethyldisiloxane (HMDSO) precursor inlet and interfaces are controlled by pumping speed. In this way, depending on O2/HMDSO ratio, ‘ceramic’ or ‘polymeric’ layers are deposited, with nanometre control of thickness of layers and interfaces. Permeability behaviour of the multilayer structures obtained is described as a function of the number of layers and their thickness.

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Section: Resultssupporting

confidence: 66%

SiOx‐Based Multilayer Barrier Coatings Produced by a Single PECVD Process

Patelli¹,

Vezzù²,

Zottarel³

et al. 2009

Plasma Processes & Polymers

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“…For energies below the HMDSO ionization energy (8.8 eV), the dissociation of the HMDSO molecule by electron impact is the dominant process. 21,37 As the bonding energy of the Si-O bond (8.31 eV) is almost twice higher than that of the Si-C bond (4.53 eV), the radical dissociation process induces a dominant production of the neutral radicals • CH 3 and Si 2 O(CH 3 ) 5 (HMDSO-15). Therefore, further reactions in the chain will be primarily initiated by these two most abundant reactive species produced in the plasma.…”

Section: Consistent Description Of the Observed Processes -Attemptmentioning

confidence: 99%

Influence of the temporal variations of plasma composition on the cyclic formation of dust in hexamethyldisiloxane-argon radiofrequency discharges: Analysis by time-resolved mass spectrometry

Despax

Caquineau

2016

AIP Advances

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Cyclic formation of dust nanoparticles in hexamethyldisiloxane (HMDSO, Si2O(CH3)6)-argon RF discharge with pulsed injection of HMDSO was studied using time-resolved mass spectrometry (MS) and optical emission spectroscopy (OES). A large amount of C2H2, considered as promoter of dust nucleation in hydrocarbon plasmas, was found as a by-product of HMDSO fragmentation. Although no negative ions were detected the presence of C2H2 in the HMDSO-Ar discharge supports the hypothesis of a dust growth mechanism based on negative ions being trapped in the plasma. It was found that at the beginning of each cycle of dust formation during α–γ′ transition, the discharge sustaining process is accompanied by a strong consumption of the HMDSO main by-products: HMDSO-15, CH4 and C2H2. At the end of the cycle, corresponding to the progressive disappearance of dust, the discharge switches back to its initial conditions. The beginning of the inverse transition, i.e. γ′–α, is most likely correlated to the growing void in the dust cloud and dust disappearance. In presence of dust nanoparticles, Ar+ and ArH+ dominate the ion population and consequently the discharge maintenance. When the dust particles gradually disappear, the discharge is rather controlled by Si2O(CH3)5+ ions. Moreover, the increased amount of such heavy ions reveals clearly their important income in the dust repelling process due to the drag force on the large sized dust even at short time scale during the injection time of HMDSO. Atomic-H production increases during the transition from dusty plasma to HMDSO-rich plasma with no dust and its role is associated to a delay in the dust nucleation stage.

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“…To explain this behavior of film thickness, we refer to the behavior of plasma characteristics presented in Table I. As reported in the literature [18][19][20][21][22], and without the presence of reactive molecular gas in the plasma (case S1), the electronic collisions with the precursor are mainly responsible of its fragmentation, whereas when nitrogen is present in the plasma phase, atomic nitrogen reacts with HMDSN in the gas phase, increasing its conversion and fragmentation, and it removes parts of the organic fraction of the film by means of gas-surface reactions [23]. The fact that the thickness of sample S1 is higher than sample S2 can be understood through the higher fragmentation of the precursor due to the higher electron density and the lower etching effect induced by UV photons.…”

Section: Thin Films Properties 321 Deposition Ratementioning

confidence: 99%

Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

Saloum

Alkhaled

2010

Acta Phys. Pol. A

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Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N 2 /HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas (NH 3 , CO 2 and O 2 ) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported.

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Oxygen diluted hexamethyldisiloxane plasmas investigated by means ofin situinfrared absorption spectroscopy and mass spectrometry

Cited by 101 publications

References 15 publications

SiOx‐Based Multilayer Barrier Coatings Produced by a Single PECVD Process

SiOx‐Based Multilayer Barrier Coatings Produced by a Single PECVD Process

Influence of the temporal variations of plasma composition on the cyclic formation of dust in hexamethyldisiloxane-argon radiofrequency discharges: Analysis by time-resolved mass spectrometry

Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

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