Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

Hennek, Jonathan W.; Smith, Jeremy; Yan, Aiming; Kim, Myung Gil; Zhao, Wei; Dravid, Vinayak P.; Facchetti, Antonio; Marks, Tobin J.

doi:10.1021/ja403586x

Cited by 181 publications

(184 citation statements)

References 121 publications

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“…This way, the residual carbon compounds would disorganize the Zn-O-Zn lattice, potentially acting as the electron transport channel even though the NFs have the smooth surface. [45] When the annealing temperature is increased to 600 °C, the organics within the NFs can be completely decomposed, whereas the ZnO nanoparticles would grow into large crystallites and eventually result into the discrete NF segments for the degraded electrical properties. It is obvious that the appropriate process window of the annealing temperature is narrow at ≈500 °C for the uniform diameter and continuous surface morphology.…”

Section: Resultsmentioning

confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

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on. [1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme. [9,19] Although hydrothermal methods are seem to be the simple process and capable to produce large amounts of 1D nanomaterials with the relatively low cost, they are challenging to precisely control the diameter, morphology, and crystal structure of the nanomaterials obtained, seriously influencing their chemical and physical properties, eventually limiting their practical utilizations. [13,20] In general, electrospinning is well accepted to its simplicity and versatility to yield organic, inorganic or composite nanofibers (NFs). [21,22] This technique can not only fabricate NFs with well-controlled properties, such as the excellent crystallinity, homogeneous chemical composition, and uniform diameters but also deliver the high throughput Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple onestep electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V th ) of ≈0.9 V, a low leakage current of ≈10 −12 A, and a superior on/off current ratio of ≈10 6 , corresponding to one of the best-performed ZnO NF devices reported to date. When high-κ AlO x thin films are employed as gate dielectrics, the source/drain voltage (V DS ) can be substantially reduced by 10× to a range of only 0-3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm 2 V −1 s −1 . These results indicate the potential of these nanofibers for use in next-generation low-power devices. Thin-Film Transistors

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Section: Resultsmentioning

confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

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“…As a result of such "oxygen-getter" behavior, 44 the In-O bond length for In atoms that are farther away from Ga and Ge cations, decreases. Different mechanism(s) should be sought for a-IZO and a-ITO because the ionic size of Zn or Sn is smaller compared to that of In; and the metal-oxygen bond strength is similar for In, Zn, and Sn.…”

Section: 18åmentioning

confidence: 99%

Composition-dependent structural and transport properties of amorphous transparent conducting oxides

et al. 2015

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“…Thin film transistors based on amorphous oxide films (OxTFTs) have attracted tremendous interest as TFT backplanes in active-matrix organic light emitting diodes (OLEDs) and liquid crystal displays owing to their high mobilities. [1][2][3][4][5][6][7] Intensive developments on oxide compounds including InO x -based, [8][9][10][11][12][13] ZnO x -based, 14 SnO x -based 15 and mixed channel materials such as InZnO x -based OxTFTs [16][17][18][19][20][21][22][23][24][25] have been widely studied in OxTFTs in recent decades because of their excellent electrical stabilities and high mobilities. Among them, InGaZnO (IGZO) 1,2,26 and InSnZnO (ITZO) 18,19 are currently being developed for use as commercial TFT backplanes because of their superior properties and high electron mobilities.…”

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confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

Cited by 181 publications

References 121 publications

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Composition-dependent structural and transport properties of amorphous transparent conducting oxides

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

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