Oxygen Gettering in Green GaP :  N  LED's Grown by Overcompensated LPE

Abstract

Improvement in the minority carrier diffusion lengths has been obtained in GaP:N LED's by controlling the oxygen contamination during LPE with getter dopants such as Al, Mg, or Si. Experimental data are presented which show a limited range in which one can achieve oxygen gettering in GaP without reducing the incorporation of nitrogen. Excess A1 produces free exciton emission with an external quantum efficiency of 0.02% at 4 A/cm 2. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-17 to IP