Oxygen-inhibited Grain Growth in Thin Films of Semiconducting Cuprous Iodide

Herrick, Carlyle S.

doi:10.1038/211958a0

Cited by 10 publications

(21 citation statements)

References 3 publications

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“…Further, it is well known that the electronic and optical properties of CuI can degrade significantly when stored in ambient condition for long durations. 24,[32][33]36 Therefore, we monitor the optical only improves its optical transparency and holes conductivity but also increases its stability in ambient condition.…”

Section: Resultsmentioning

confidence: 99%

“…Previously, it has been postulated that degradation of CuI samples with time is because of recrystallization, grain growth, loss of iodine and unwanted oxidation of CuI. 32 Therefore, to better understand the reason for improved stability of CuI-TiO2-180 in comparison to pure CuI samples, combined SEM-CL measurements were performed on aged CuI and CuI-TiO2-180 samples. It is quite apparent from the images that the grains in aged pure CuI (Figure 6(a-b)) have grown large and rough over time, most probably due to re-crystallization and discontinuous grain growth, leading to increased light scattering and decreased transparency.…”

Section: Resultsmentioning

confidence: 99%

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Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor

Raj¹,

Lü²,

Liu

et al. 2019

ACS Appl. Mater. Interfaces

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The challenges of making high performance, low temperature processed, p-type transparent conductors (TCs) have been the main bottleneck for the development of flexible transparent 2 electronics. Though a few p-type transparent conducting oxides (TCOs) have shown promising results, they need high processing temperature to achieve the required conductivity which makes them unsuitable for organic and flexible electronic applications. Copper iodide is a wide band gap p-type semiconductor that can be heavily doped at low temperature (<100 o C) to achieve conductivity comparable or higher than many of the well-established p-type TCOs. However, as processed CuI loses its transparency and conductivity with time in an ambient condition which makes them unsuitable for long term applications. Herein, we propose CuI-TiO2 composite thin films as a replacement of pure CuI. We show that the introduction of TiO2 in CuI makes it more stable in ambient condition while also improving its conductivity and transparency. A detailed comparative analysis between CuI and CuI-TiO2 composite thin films have been performed to understand the reasons for improved conductivity, transparency and stability of CuI-TiO2 samples in comparison to pure CuI samples. The enhanced conductivity in CuI-TiO2 stems from the spacecharge layer formation at the CuI/TiO2 interface, while the improved transparency is due to reduced CuI grain growth mobility in the presence of TiO2. The improved stability of CuI-TiO2 in comparison to pure CuI is a result of inhibited recrystallization and grain growth, reduced loss of iodine and limited oxidation of CuI phase in presence of TiO2. For optimized fraction of TiO2, average transparency of ~78% (in 450-800 nm region) and a resistivity of 14 mΩ.cm is achieved, while maintaining a relatively high mobility of ~3.5 cm 2 V-1 s-1 with hole concentration reaching as high as 1.3 x 10 20 cm-3. Most importantly, this work opens up the possibility to design a new range of p-type transparent conducting materials using CuI/insulator composite system such as CuI/SiO2, CuI/Al2O3, CuI/SiNx, etc.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor

Raj¹,

Lü²,

Liu

et al. 2019

ACS Appl. Mater. Interfaces

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“…The effect of oxygen on the (long term) grain stability and related optical haze has been discussed in Ref. with the conclusion that oxygen inhibits grain growth in CuI thin films.…”

Section: Cui Materialsmentioning

confidence: 99%

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

253

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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“…Depending on the fabrication route, CuI films frequently have rough surface morphology and thus a frosted‐glass‐like appearance. The most common synthesis route of CuI films is the chemical reaction of Cu thin films with vapor‐phase iodine (known as the vapor iodination method) . The Cul films produced by this method usually have very rough surface morphology with the surface roughness of ≈80 nm .…”

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confidence: 99%

High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

Yamada

Ino

Tomura

et al. 2017

Adv Elect Materials

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Transparent p‐type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p‐type transparent oxide semiconductors. Mildly heat‐treated CuI layers have mobilities of ≈20 cm2 V−1 s−1, which are comparable to those of p‐type GaN epilayers. Highly transparent p–n diodes with sufficient rectification ratio (106) can be manufactured by employing a heterojunction of p‐type CuI and amorphous n‐type In‐Ga‐Zn‐O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p‐type semiconductor for flexible transparent electronics.

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Oxygen-inhibited Grain Growth in Thin Films of Semiconducting Cuprous Iodide

Cited by 10 publications

References 3 publications

Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor

Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

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Oxygen-inhibited Grain Growth in Thin Films of Semiconducting Cuprous Iodide

Cited by 10 publications

References 3 publications

Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor

Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

High‐Mobility Transparent p‐Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

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Product

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Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor

Introduction of TiO₂ in CuI for Its Improved Performance as a p-Type Transparent Conductor