Oxygen Partial Pressure Dependence of the In Situ Growth of Ba1-xKxBiO3 Films by Laser Ablation

Effects of oxygen partial pressure and substrate temperature as well as the Rb content in the target on the in situ growth of Ba1−xRbxBiO3 (BRBO) films prepared by laser ablation are studied. The optimal target composition for growing the superconducting films in the present study is Ba:Rb:Bi=0.6:0.8:1.0. Oxygen partial pressure plays an important role in controlling the doping of Rb into the BRBO phase and hence the growth of the superconducting films. For the Ba0.6Rb0.8BiO3 target the superconducting films can be grown at 410–485 °C in 1–50 mTorr of O2 and the optimal pressure is about 20 mTorr, under which Rb is readily doped into the BRBO phase. Meanwhile the best film with Tc (onset) of 27.5 K and Tc (zero) of 25 K is grown at 475 °C in 20 mTorr of O2. The (100) preferred orientation is present in most of the superconducting films, while the (110) orientation is dominant in the films grown in 30–40 mTorr of O2 at 430–450 °C which are about 100 °C higher than those reported previously. For the superconducting films thicker than 0.6 μm the cracking is commonly observed and the lower the growth temperature the greater the cracking. The degradation of the Tc of the BRBO film on exposure to air (moisture) can be attributed to the surface contamination which may also be one of the causes for the semiconductive behavior of electrical resistivity in the normal state.

show abstract

Parametric study of the in situ growth of BaKBiO thin films by laser ablation

Lin

Pan

Chen

1994

Journal of Applied Physics

View full text Add to dashboard Cite

In situ growth of Ba1−xKxBiO3 (BKBO) films by laser ablation has been studied as a function of gas pressure and substrate temperature in O2, N2O, and N2O/O2 (1:1), respectively. The superconducting BKBO films can be grown at 410–500 °C in 15–60 mTorr of O2, at 390–510 °C in 20–2000 mTorr of N2O, and at 390–500 °C in 15–700 mTorr of N2O/O2 (1:1), respectively. Oxygen partial pressure plays an important role in controlling the doping of potassium into the BKBO phase during in situ deposition and hence the growth of the superconducting films. The optimum deposition pressures are 40 mTorr of O2, 30–50 mTorr of N2O, and 20–50 mTorr of N2O/O2 (1:1), under which not only the temperature range available for growing the superconducting films is wider but also the Tc’s of the as-grown films are higher. N2O used as an oxidation gas during growth is efficient in suppressing the crack formation in the BKBO films on cooling. The target composition also plays an important role in film growth. The optimal target composition studied is Ba:K:Bi=0.6:0.8:1.0.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Oxygen Partial Pressure Dependence of the In Situ Growth of Ba_1-xK_xBiO₃ Films by Laser Ablation

Cited by 4 publications

References 15 publications

Ablation laser fluence as an effective parameter to control superconductivity in Ba 1−x K x BiO 3 films

Ablation laser fluence as an effective parameter to control superconductivity in Ba 1−x K x BiO 3 films

Effects of oxygen partial pressure and substrate temperature on the in situ growth of the Ba1−xRbxBiO3 films by laser ablation

Parametric study of the in situ growth of BaKBiO thin films by laser ablation

Contact Info

Product

Resources

About