Oxygen passivation of silicon nanocrystals: Influences on trap states, electron mobility, and hybrid solar cell performance

Ding, Yi; Sugaya, Michihiro; Liu, Qiming; Zhou, Shu; Nozaki, Tomohiro

doi:10.1016/j.nanoen.2014.09.031

Cited by 44 publications

(26 citation statements)

References 58 publications

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“…These unique properties render QDs versatile applications such as in transistors, solar cells, LEDs, diode lasers, medical imaging, and quantum computing [248][249][250][251][252][253][254][255]. Stimulated by these promising applications, many approaches have been developed to synthesize the semiconductor QDs [256,257].…”

Section: Semiconductorsmentioning

confidence: 99%

A review of plasma–liquid interactions for nanomaterial synthesis

Chen¹,

Li²,

Li³

2015

J. Phys. D: Appl. Phys.

312

225

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Over the past decades, a new branch of plasma research, the nanomaterial (NM) synthesis by plasma-liquid interactions (PLIs), is rapidly rising, mainly due to the recently developed various plasma sources operated from low to atmospheric pressures. The PLIs provide novel plasma-liquid interfaces where many physical and chemical processes take place. By exploiting these physical and chemical processes, various NMs ranging from noble metal nanoparticles to graphene nanosheets can be easily synthesized. The currently rapid development and increasingly wide utilization of the PLI method naturally lead to an urgent requirement for presenting a general review. This paper reviews the current status of research on plasma-liquid 2 interactions for nanomaterial syntheses. Focus is on the comprehensive understanding of the synthesis process and perceptive opinions on the present issues and future challenges in this subject.

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Section: Semiconductorsmentioning

confidence: 99%

A review of plasma–liquid interactions for nanomaterial synthesis

Chen¹,

Li²,

Li³

2015

J. Phys. D: Appl. Phys.

312

225

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“…Among all kinds of semiconductor nanocrystals (NCs), silicon (Si) NCs hold great promise for widespread applications in various fi elds such as optoelectronics, [1][2][3][4] photovoltaics, [5][6][7][8] electronics, [9][10][11] energy storage [ 12,13 ] and bioimaging. [ 14,15 ] This is largely due to the nontoxicity and abundance of Si and the compatibility of Si-NC technology with well-established bulkSi technology.…”

Section: Introductionmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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and intermediate-band transition for bulk Si. [ 19,20 ] For Si NCs, hyperdoping is also emerging as an effective means to obtain novel properties. [21][22][23][24][25][26] For instance, localized surface plasmon resonance (LSPR) may occur to hyperdoped Si NCs. [21][22][23] And the energy of the LSPR can be conveniently tuned by the doping level.It is well known that the properties of intrinsic Si NCs are critically dependent on the NC size. [ 27,28 ] However, the size effect for hyperdoped Si NCs has been hardly explored. Previous work simply focused on the effect of the doping level. It has been recently predicted that the LSPR of hyperdoped Si NCs can be controlled by not only the doping level but also the NC size. [ 29 ] This highlights that the critical role played by the size effect may remain for Si NCs after hyperdoping. Therefore, it is of great interest to also investigate the size effect for hyperdoped Si NCs. Knowledge concerning the effect of the NC size on the dependence of the properties of hyperdoped Si NCs on the doping level should be invaluable for the synthesis of hyperdoped Si NCs with desired functionality.In this work, Si NCs hyperdoped with different B-doping levels are considered. The dependence of the physical properties of hyperdoped Si NCs on the NC size is examined. It is shown that the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones. While Raman, subbandgap optical absorption and the LSPR spectra are all modifi ed with increasing B concentrations in Si NCs, they also indicate that the largest Si NCs are less affected by disorder and charge carrier surface scattering. As a result, there exists a range of doping concentrations where the LSPR energy can be blueshifted as the NC size decreases. Results and DiscussionBoth B-hyperdoped and undoped Si NCs with different sizes have been synthesized by using SiH 4 -based nonthermal plasma. [ 6,[30][31][32] The atomic concentrations of B in B-hyperdoped Si NCs are ≈17%, 36%, and 60%, which are measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Transmission electron microscopy (TEM) and Raman

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“…Silicon nanocrystals (Si NCs) have been intensively investigated during past decades for their promising applications in various fields such as optoelectronics [1][2][3][4][5][6], photovoltaics [7][8][9][10][11], energy storage [12,13], and bioimaging [14,15]. This is mainly due to their nontoxicity, low cost, and compatibility with well-established Si-based microelectronic technology.…”

Section: Introductionmentioning

confidence: 99%

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Cottenier

et al. 2017

Phys. Rev. B

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Doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO 2 ) with boron (B) and phosphorus (P) is a promising way of tuning the properties of Si NCs. Here we take advantage of density functional theory to investigate the dependence of the structural and electronic properties of Si NCs embedded in SiO 2 on the doping of B and P. The locations and energy-level schemes are examined for singularly B-doped or B/P-codoped Si NCs embedded in SiO 2 with a perfect or defective Si/SiO 2 interface at which a Si dangling bond exists. A dangling bond plays an important role in the doping of Si NCs with B or B/P. The doping behavior of B in Si NCs embedded in SiO 2 vastly differs from that of P. The electronic structure of a B/P-codoped Si NC largely depends on the distribution of the dopants in the NC.

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Oxygen passivation of silicon nanocrystals: Influences on trap states, electron mobility, and hybrid solar cell performance

Cited by 44 publications

References 58 publications

A review of plasma–liquid interactions for nanomaterial synthesis

A review of plasma–liquid interactions for nanomaterial synthesis

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

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