Oxygen removal at grain boundaries in platinum films on YSZ

Beck, G.; Bachmann, Christoph

doi:10.1016/j.ssi.2014.01.033

Cited by 5 publications

(6 citation statements)

References 17 publications

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“…Upon thermal annealing, recrystallization is at first driven by a reduction of dislocation energy, followed by grain growth driven by the minimization of the overall energy associated with grain boundaries (GBs). The latter involves normal grain growth where all existing grains grow uniformly, as well as abnormal grain growth (also known as secondary crystallization), where one type of grain will grow significantly faster than the others driven by the difference in surface energies between different grain orientations. − Our data show that such abnormal growth in Pt is significantly enhanced by the presence of borazine. For Pt thin films it has been frequently observed that the presence of oxygen is detrimental to the formation of grains with (111) surface orientation. , In this context B, which can readily adsorb in Pt grain boundaries, is frequently used as deoxidizer, and the addition of B to Pt has been seen to cause GB unpinning .…”

Section: Resultsmentioning

confidence: 75%

“…The latter involves normal grain growth where all grains grow uniformly, as well as abnormal grain growth (also known as secondary crystallization) where one type of grain will grow significantly faster than the others driven by the difference in surface energies between different grain orientations. [50][51][52][53][54] Our data shows that such abnormal growth in Pt is significantly enhanced by the presence of borazine. For Pt thin films it has been frequently observed that the presence of oxygen is detrimental to the formation of grains with (1 1 1) surface orientation.…”

Section: Details Of Growth Processmentioning

confidence: 97%

“…51,55 In this context B, which can readily adsorb in Pt grain boundaries, 56 is frequently used as deoxidizer, 57 and the addition of B to Pt has been seen to cause GB unpinning. 54 We therefore attribute the accelerated abnormal Pt grain growth to GB unpinning via removal of pre-existing solutes. Another potential mechanism could be B causing solute drag by decorating and pinning selective GBs, leaving only high mobility GBs able to grow.…”

Section: Details Of Growth Processmentioning

confidence: 98%

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A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

et al. 2019

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Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability.Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks.

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Section: Resultsmentioning

confidence: 75%

Section: Details Of Growth Processmentioning

confidence: 97%

Section: Details Of Growth Processmentioning

confidence: 98%

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A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

et al. 2019

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“…These oxygen atoms induced the formation of the SrO layer before the subsequent O 3 pulse step, causing the initial excessive growth. Although the Pt substrate was not oxidized by O 3 during the process, it is believed that the oxygen atoms could be incorporated into the polycrystalline Pt film along the grain boundaries during the O 3 pulse step, which then enhanced the SrO growth during the subsequent Sr( i Pr 3 Cp) 2 precursor pulse step . Nonetheless, the supply of oxygen via such a mechanism must be lower than that via the oxidation and reduction of Ru, and thus, the degree of excessive growth on Pt is lower than that on Ru.…”

Section: Resultsmentioning

confidence: 99%

Improved Initial Growth Behavior of SrO and SrTiO₃ Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}₂ as Sr-Precursor

Lee

Jeon

et al. 2015

Chem. Mater.

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An atomic layer deposition (ALD) process for SrTiO 3 (STO) thin film growth was developed using a newly designed and synthesized heteroleptic Sr-precursor, {Sr(demamp)(tmhd)} 2 (demampH = 1-{[2-(dimethylamino)ethyl](methyl)amino}-2-methylpropan-2-ol, tmhdH = 2,2,6,6-tetramethyl-3,5-heptanedione), which offered an intermediate reactivity toward oxygen between Sr(tmhd) 2 and Sr( i Pr 3 Cp) 2 . Because of the appropriate reactivity of {Sr(demamp)(tmhd)} 2 toward oxygen, the abnormal initial growth behavior (due to interaction between the Sr-precursor and active oxygen contained in the underlying oxidized Ru layer) became negligible during the growth of the SrO and STO films on the Ru electrode, which allowed the growth of the SrO and STO films to be highly controllable with a moderate growth rate. Using Ti(CpMe 5 )(OMe) 3 as the Ti-precursor and O 3 as the oxygen source in the TiO 2 ALD subcycle, the ALD process of the STO film revealed a growth rate of 0.05 nm/cycle and ∼85% of step coverage in terms of the thickness and cation composition on a capacitor hole structure with an aspect ratio of 10 (opening diameter of 100 nm and depth of 1 μm). The minimum achievable equivalent oxide thickness (t ox ) with a low leakage current (<10 −7 A/cm 2 at 0.8 V) was limited to 0.46 nm. The damage effect on the underlying Ru electrode by the prolonged ALD process time appears to affect the limited scalability of t ox . ■ INTRODUCTIONSrTiO 3 (STO) has been considered to be a promising candidate for a dielectric layer in the next-generation dynamic random access memory (DRAM) capacitors because of its high permittivity (∼300 in bulk material) compared with that of other dielectric materials, such as HfO 2 and ZrO 2 . Many studies have reported a high dielectric constant of >100 for metal− insulator−metal (MIM) capacitors that contain an STO insulator, in which the insulators are thinner than 20 nm. 1−6 Considering the extremely tiny three-dimensional (3D) structure of the DRAM capacitors, 7 atomic layer deposition (ALD) appears to be the only feasible thin film growth technique that can fulfill the stringent requirements of thickness and composition step coverage in the DRAM capacitors. Despite the acute requirement for a suitable ALD process of the STO films, the development has been hindered for two main reasons: first, the lack of a suitable Sr-precursor for feasible STO ALD, although that for Ti is abundant; second, because of the low temperature of the ALD, ensuring a suitable crystalline quality of the STO film is challenging in general. Because such problems and possible solutions have already been extensively reviewed in previous reports from the authors' group, 3,7,8 more recent reports that are directly related to the present work are described in this section.The first viable report in this field was published by the Helsinki group in the late 1990s. Vehkamaki et al. deposited STO films with Sr( i Pr 3 Cp) 2 (Pr and Cp are propyl and cyclopentadienyl group, respectively) and Ti(O i Pr) 4 [TTIP] as Sr-and Ti-precursors,...

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“…2,3) In spite of relatively large lattice mismatch (ca. −23%), platinum has been grown epitaxially on yttria-stabilized zirconia (YSZ), and thin films of platinum have been deposited by pulse laser deposition (PLD) 1,2,[4][5][6][7][8][9][10][11] or sputtering. 12) It should be noted that Pt=YSZ is an important model system for solid fuel cells.…”

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confidence: 99%

Single-crystalline epitaxial platinum film on yttrium-stabilized zirconia (111) prepared by sputtering deposition

Tanaka

Taniguchi

2016

Jpn. J. Appl. Phys.

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Sputtering is an important film deposition method that has been used for the fabrication of thin films used in basic research to the mass production process in factories. However, single-crystalline epitaxial platinum film has not been successfully prepared on yttria-stabilized zirconia (YSZ) (111) substrates by the sputtering method. We have deposited platinum by inductively coupled plasma-assisted sputtering on YSZ(111) with postdeposition annealing at 750–850 °C. As a result, single-crystalline epitaxial films with a root mean square roughness better than 0.2 nm were successfully fabricated.

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Oxygen removal at grain boundaries in platinum films on YSZ

Cited by 5 publications

References 17 publications

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

Improved Initial Growth Behavior of SrO and SrTiO₃ Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}₂ as Sr-Precursor

Single-crystalline epitaxial platinum film on yttrium-stabilized zirconia (111) prepared by sputtering deposition

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Oxygen removal at grain boundaries in platinum films on YSZ

Cited by 5 publications

References 17 publications

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor

Single-crystalline epitaxial platinum film on yttrium-stabilized zirconia (111) prepared by sputtering deposition

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Improved Initial Growth Behavior of SrO and SrTiO₃ Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}₂ as Sr-Precursor