Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

Kai, Yan; Yao, Wenqing; Zhao, Yuanyuan; Yang, Liping; Cao, Jiangli; Zhu, Yongfa

doi:10.1016/j.apsusc.2016.08.051

Cited by 26 publications

(9 citation statements)

References 37 publications

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“…The absorbance peaks at 415, 512, 600, 623, and 750 cm −1 are assigned to Hf-O bonding configuration [8][9][10][11]. The peaks at 820, 1000, and 1108 cm −1 correspond to the Si-O bonds in the films [8][9][10]. Considering the as-deposited HfO2 sample, the Si-O peak at 1108 cm −1 suggests that the as-deposited film already consists of an SiOx-like interfacial layer between the silicon wafer and HfO2 layer.…”

Section: Resultsmentioning

confidence: 99%

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

et al. 2017

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Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO 2 ) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO 2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD). Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO 2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC) solar cells with the HfO 2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV) and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO 2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO 2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.

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Section: Resultsmentioning

confidence: 99%

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

et al. 2017

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“…Besides, the FTIR spectra of the investigated Hf x Ta y O z films presented in Figure 7 have also displayed the detection of Hf-O chemical bondings located at 424, 465, 512, 563, 32 and 623 cm –1 , 29 29 Ta–O chemical bondings at 524, 648, 42 , 43 1150, and 1184 cm –1 , 44 as well as Ta–O–Ta chemical bonding at 660 cm –1 . 45 45 Additional chemical bondings with regard to Ta–N and Ta–O–N were detected at 784 46 and 392.2 cm –1 47 as well as at 389.2 cm –1 , 47 47 respectively, for all of the investigated Hf x Ta y O z films.…”

Section: Resultsmentioning

confidence: 80%

“…The discrepancy was because of the estimation of D it using Terman's method takes into consideration the contribution of slow traps in addition to interface traps in the samples, while the conductance method does not consider slow traps. Besides, the FTIR spectra of the investigated Hf x Ta y O z films presented in Figure 7 have also displayed the detection of Hf-O chemical bondings located at 424, 465, 512, 563, 32 and 623 cm −1 , 2929 Ta−O chemical bondings at 524, 648, 42,43 1150, and 1184 cm −1 , 44 as well as Ta−O−Ta chemical bonding at 660 cm −1 . 4545 Additional chemical bondings with regard to Ta−N and Ta−O−N were detected at 784 46 and 392.2 cm −147 as well as at 389.2 cm −1 , 4747 respectively, for all of the investigated Hf x Ta y O z films.…”

Section: Resultsmentioning

confidence: 81%

“…The reason contributing to this anticipation was due to utilization of the lowest wet oxidation temperature of 400 °C, wherein the formation of the SiO x compound was presumed to be least significant and the influence of this compound on the overall k value of Hf x Ta y O z film was minimal. This statement could be further supported through the inability of detecting O–O bond originating from peroxo species (−O 2 2– ) at 880 cm –1 that was representing the formation of amorphous SiO 2 for Hf x Ta y O z films subjected to wet oxidation at 400 °C (Figure ). Nonetheless, the increase of wet oxidation temperature to/beyond 600 °C has revealed the detection of O–O bond, suggesting the onset of interfacial layer formation.…”

Section: Resultsmentioning

confidence: 97%

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Growth and Characterization of Ternary Hf_xTa_yO_z Films via Nitrogen-Infused Wet Oxidation

et al. 2020

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Nitrogen-infused wet oxidation at different temperatures (400–1000 °C) was employed to transform tantalum–hafnia to hafnium-doped tantalum oxide films. High-temperature wet oxidation at 1000 °C marked an onset of crystallization occurring in the film, accompanied with the formation of an interfacial oxide due to a reaction between the inward-diffusing hydroxide ions, which were dissociated from the water molecules during wet oxidation. The existence of nitrogen has assisted in controlling the interfacial oxide formation. However, high-temperature oxidation caused a tendency for the nitrogen to desorb and form N–H complex after reacting with the hydroxide ions. Besides, the presence of N–H complex implied a decrease in the passivation at the oxide–Si interface by hydrogen. As a consequence, defect formation would happen at the interface and influence the metal–oxide–semiconductor characteristics of the samples. In comparison, tantalum–hafnia subjected to nitrogen-infused wet oxidation at 600 °C has obtained the highest dielectric constant, the largest band gap, and the lowest slow trap density.

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“…Besides, the detection of Si-O peak at 1108 cm À1 39 and asymmetric stretching mode of SiO 2 at 1097 cm À1 40 suggested the presence of interfacial layer attributable to SiO x . The amorphous SiO 2 was present along with peroxo species ( O 2 2À ) detected at 880 cm À1 , which gave O O bonds 41 and also other absorption features of Hf-O in the films (400 C-1000 C) (424-623 cm À1 ) 39 ). The peaks were detected together with Ta-O peaks [42][43][44] and Ta-O-Ta peak.…”

Section: Resultsmentioning

confidence: 99%

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

Lim

Quah

2021

Intl J of Energy Research

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Ternary hafnium-doped tantalum oxide (Hf x Ta y O z ) films were successfully obtained after wet oxidation at different temperatures (400-1000 C). A phase transformation from amorphous to crystalline Hf x Ta y O z phases as well as film densification process happened with respect to temperature until 800 C. However, at temperature beyond 800 C, an increase of the thickness was attained as a consequence of film growth and interfacial layer formation. Besides, additional phenomena allied with nitridation and passivation have also happened in the samples. However, formation of N-H complex would decrease the nitridation and passivation due to a reduction of nitrogen and H 2 available at the interface to retard interfacial layer formation as well as minimizing density, effective oxide charges, and slow trap density demonstrated by Hf x Ta y O z for a functional MOS capacitor were investigated.

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Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

Cited by 26 publications

References 37 publications

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Growth and Characterization of Ternary Hf_xTa_yO_z Films via Nitrogen-Infused Wet Oxidation

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

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Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

Cited by 26 publications

References 37 publications

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

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Growth and Characterization of Ternary Hf_xTa_yO_z Films via Nitrogen-Infused Wet Oxidation