2012
DOI: 10.1021/cm202901z
|View full text |Cite
|
Sign up to set email alerts
|

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

Abstract: A new atomic layer deposition (ALD) process for V 2 O 5 using ozone (O 3 ) as oxidant has been developed that resulted in crystalline V 2 O 5 thin films which are single-phase and orthorhombic on various substrates (silicon, Au-coated stainless steel, and anodic aluminum oxide (AAO)) without any thermal post-treatment. Within a fairly narrow temperature window (170−185°C), this low temperature process yields a growth rate of ∼0.27 Å/cycle on Si. It presents good uniformity on planar substrates. Excellent confo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

5
124
0

Year Published

2014
2014
2019
2019

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 123 publications
(129 citation statements)
references
References 32 publications
5
124
0
Order By: Relevance
“…The VTIP pulse length was optimized for the large ALD reactor where a 2 s pulse of VTIP was required to saturate the growth rate per cycle with the expected~0.2 per cycle rate (Figure 2 a). [58] Also similar to prior V 2 O 5 ALD work, an extended exposure to water vapor was used to encourage hydrolysis of isopropoxy ligands. Here, an extended 1 s exposure was used with the reactor isolated from the vacuum pump before purging (see the Experimental Section) rather than a continuous pulse of oxidant.…”
Section: Resultsmentioning
confidence: 99%
“…The VTIP pulse length was optimized for the large ALD reactor where a 2 s pulse of VTIP was required to saturate the growth rate per cycle with the expected~0.2 per cycle rate (Figure 2 a). [58] Also similar to prior V 2 O 5 ALD work, an extended exposure to water vapor was used to encourage hydrolysis of isopropoxy ligands. Here, an extended 1 s exposure was used with the reactor isolated from the vacuum pump before purging (see the Experimental Section) rather than a continuous pulse of oxidant.…”
Section: Resultsmentioning
confidence: 99%
“…16,18 In a 3D Li-ion microbattery, a thin layer vanadium oxide could be used as a cathode material if such a layer could be successfully electrodeposited on a nanostructured Al substrate. Although other techniques including ALD, 19 sputtering, 20 chemical vapor deposition 21 and sol-gel techniques 22 have been employed to deposit vanadium oxide films, these methods are generally associated with complicated approaches and high processing costs when applied to the preparation of nanostructured electrodes. In this scenario, electrodeposition stands out as a simple and elegant method to synthesize vanadium oxides with precise control of the microstructure, surface morphology and homogeneity of the deposited oxide films.…”
mentioning
confidence: 99%
“…Vanadiumoxytriisopropoxide (CAS: 5588-84-1, Sigma-Aldrich) precursor was heated to 70 C and exposed for 0.05 up to 0.65 s. The deposition temperature varied between 130 and 170 C inside of the known ALD window. 12 To extend the exposure time without influencing the pressure inside the chamber, constant precursor pulses were dosed into the chamber. After 40 s exposure, the chamber was pumped down to base pressure and the precursor was pulsed again.…”
Section: B Atomic Layer Depositionmentioning
confidence: 99%