Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

Yin, Zhipeng; Wei, Shengsheng; Bai, Jiao; Xie, Weiwei; Liu, Zhaohui; Qin, Fuwen; Wang, Dejun

doi:10.1088/1674-1056/ac7ccf

Cited by 1 publication

(3 citation statements)

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“…Figure shows the elemental depth profiles of Si, C, O, N, and H of all samples. The boundaries of the interfacial transition region were marked by two vertical dashed lines, which are defined according to the methods previously reported. ,,, This section evaluated the SiO 2 /SiC interface properties from the thickness of the interfacial transition region, the C relative content, the concentration of O atoms, and the concentrations of H and N atoms.…”

Section: Resultsmentioning

confidence: 99%

“…The boundaries of the interfacial transition region were marked by two vertical dashed lines, which are defined according to the methods previously reported. 9,13,35,45 This section evaluated the SiO 2 /SiC interface properties from the thickness of the interfacial transition region, the C relative content, the concentration of O atoms, and the concentrations of H and N atoms. interface and bulk SiO 2 , which is rich in a large number of interfacial traps or NIOTs, such as SiO x C y , SiO x , and C-related traps.…”

Section: Mechanism Of Nh Surface Pretreatment To Improve Interface Pr...mentioning

confidence: 99%

“…Much of the thermal oxidation and interface passivation technologies have been exploited to improve the SiO 2 /SiC interface quality and device performance. − Wet oxygen oxidation and NO oxidation are the most commonly used methods to improve the SiO 2 /SiC interface quality; however, these methods are detrimental to the V th / V fb stability or can introduce additional fast-traps. − Additionally, postoxidation annealing in NO, N 2 O, NH 3 , and POCl 3 is widely recognized as an effective technique to passivate interfacial defects. − Although these attempts have improved the V th / V fb stability to some extent, the introduction of extra N or P elements changes the stoichiometric ratio of the oxide layer, which increases the dielectric constant of the oxide layer and reduces its breakdown electric field. , …”

Section: Introductionmentioning

confidence: 99%

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Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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We investigated the effect of nitrogen–hydrogen (NH) mixed plasma pretreatment of 4H–SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal–oxide–semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (V fb) and the midgap voltage (V mg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si–H and Si–N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

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