P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment

Abstract

This work presents an all-solution approach to oxide TFT fabrication through the photo-functionalization of InZnO using photo-assisted methods. We fabricated high-performance allsolution devices using UV and excimer laser treatment which are competitive with vacuum-processed TFTs. This work is a big step towards large-area manufacture of low-cost electronics.

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

“…Improvements to AOS mobility usually include high-temperature annealing, induced crystallization, and the construction of heterojunctions [9][10][11][12][13][14]. According to the reported literature, their mechanisms have basically been clarified.…”