2012
DOI: 10.1002/j.2168-0159.2012.tb05991.x
|View full text |Cite
|
Sign up to set email alerts
|

P‐139L: Late‐News Poster: AC Gate‐Drain‐Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

Abstract: This paper investigates the reliability behavior of IGZO TFT with different widths under AC gate and drain stress. Device of larger width suffers from worse current degradation. By comparing the contact resistance after stress such behavior can be attributed to the damaged contact region by large current during stress. Author KeywordsReliability, voltage stress, oxide TFTs I. Objective and BackgroundRecently, amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) have received wide attention d… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2015
2015
2015
2015

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 3 publications
0
0
0
Order By: Relevance