Short channel amorphous In–Ga–Zn–O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability

Kim, Soo Chang; Kim, Young Sun; Yu, Eric Kai-Hsiang; Kanicki, Jerzy

doi:10.1016/j.sse.2015.05.002

Cited by 24 publications

(15 citation statements)

References 35 publications

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“…These are consistent with the properties of SGTs that the device is controlled by the source region ( S ) and is less sensitive to L . This is an advantage over conventional TFTs where the drain current is affected by the shorter channel and thus is susceptible to device‐to‐device fluctuations due to fabrication variability . Moreover, Figure b,c shows that the devices with longer channel has a higher saturated current than those with shorter channel, which is the opposite of what is observed in a traditional TFT.…”

Section: Structural and Electrical Characteristics Of Source‐gated Trsupporting

confidence: 81%

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

et al. 2019

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Thin insulating layers are used to modulate a depletion region at the source of a thin‐film transistor. Bottom contact, staggered‐electrode indium gallium zinc oxide transistors with a 3 nm Al2O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source‐gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V−1, and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2–50 µm channels and 2× for 9‐45 µm source‐gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky‐contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact‐controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low‐power, robust design approaches as large‐scale fabrication techniques with sub‐nanometer control mature.

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Section: Structural and Electrical Characteristics Of Source‐gated Trsupporting

confidence: 81%

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

et al. 2019

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“…The unoccupied hybrid state of IGZO active layers was analyzed by O K-edge spectra using electron energy loss spectroscopy (EELS, GIF965-ER, JEOL) at 80 kV. In particular, the analysis area was determined through TEM images in order to perform This effect is commonly observed in silicon-based TFT [10] as well as in an IGZO TFT (normally for L < 6 μm) [11] when the channel length is reduced. This non-saturation is associated with the channel length modulation which accounts for the drain current increase resulted from the shrinking channel length with the application of drain voltage in excess of the saturation drain-to-source voltage.…”

Section: Physical Property Analysis Of Igzo-tftsmentioning

confidence: 99%

P‐3: A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors

Park¹,

Bae²,

Kang³

et al. 2019

Symp Digest of Tech Papers

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This study provides the most plausible origin of the drain current drop (DCD) phenomenon by hot carrier effect in InGaZnO thin film transistors (IGZO-TFTs). The degraded performance of IGZO-TFTs after the DCD phenomenon was related to the charge trapping and modification of the electronic structure by collision of an IGZO matrix with hot carriers. Author KeywordsIGZO-TFTs; Hot carrier effect; Drain current drop phenomenon; Electronic structure; band edge state.

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“…There have been growing interests in transparent oxide semiconductors (TOSs) for their potential application in thin-film transistors (TFTs) backplanes of flat-panel displays (FPDs) such as active matrix organic light-emitting diodes (AMOLEDs) 1 2 3 and liquid-crystal displays (LCDs) 4 5 . InGaZnO (IGZO) is one of the most common TOSs owing to its advantages of relatively high mobility compared to amorphous silicon, good uniformity, visible-light transparency, and low cost 6 7 8 9 10 .…”

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confidence: 99%

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Xiao

Dong

Lan

et al. 2016

Sci Rep

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Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm2V−1s−1. The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

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Short channel amorphous In–Ga–Zn–O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability

Cited by 24 publications

References 35 publications

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

P‐3: A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

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