P‐3: A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors

Park, Hyun-Woo; Bae, Ji‐Hong; Kang, Hyunjin; Kim, Dae Hwan; Jung, PyongGil; Park, HyeKyung; Lee, SeokRyoul; Bae, Jong Uk; Yoon, Soo Yong; Kang, In‐Byeong

doi:10.1002/sdtp.13152

Cited by 23 publications

(10 citation statements)

References 15 publications

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“…The reliability of amorphous oxide semiconductor thinfilm transistors (AOS-TFTs) is vital for high-definition displays and functional electronic devices. However, drain current drop (DCD) degradation has been commonly observed in the output characteristics of TFTs with channel lengths of L<10 μm [1,2]. Here, we show that DCD is a reversible process that is closely related to reduced metaloxygen bonds and is most likely caused by destruction induced by hot electrons.…”

Section: Introductionmentioning

confidence: 70%

P‐1.7: The Mechanisms and a Solution for Drain Current Drop in amorphous InGaZnO Thin‐Film Transistors

Chen

Guo

et al. 2022

Symp Digest of Tech Papers

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Section: Introductionmentioning

confidence: 70%

P‐1.7: The Mechanisms and a Solution for Drain Current Drop in amorphous InGaZnO Thin‐Film Transistors

Chen

Guo

et al. 2022

Symp Digest of Tech Papers

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“…5(c)). Therefore, the rapid decrease in current at low VGS is explained by hot carrier generation by impact ionization [9] or Zn-O bond breaking [10] and local VT increase due to trapping near the drain, independent of dopant diffusion. In other words, it can be interpreted that defect creation occurs by hot electrons near the drain where the field is concentrated and that the electrons are trapped and locally decrease.…”

Section: Vds-sweepmentioning

confidence: 99%

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

Ryoo

Yang

Lee

et al. 2022

Symp Digest of Tech Papers

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The spatial distribution of the donor dopant and the source‐drain resistance (RSD) in oxide Thin Film Transistor (TFT) for display backplane is usually considered to be determined by the device structure and the process. This work shows that the dopant concentration of lateral distribution of thermal equilibrium carrier concentration n0(y) may vary dynamically depending on the operation conditions during circuit operation and thermally‐activated and field‐enhanced diffusion of dopants in InGaZnO (IGZO) was found as a physical cause. In actual Organic Light‐Emitting Diode (OLED) backplane circuit operation, the reliability degradation conditions of IGZO TFTs were summarized into three conditions: Negative Bias Temperature Stress (NBTS), Constant Voltage Stress (CVS), and Drain‐to‐Source Voltage (VDS)‐sweep, and as a result of analyzing TFT device reliability, dopant diffusion occurred as the temperature increased, and the lateral field increased, resulting in RSD increase and channel resistance decrease. This causes degradation of device characteristics accumulated during circuit operation and shows various degradation patterns. It is connected to the existing Positive Bias Stress (PBS) and Negative Bias Stress (NBS) degradation mechanisms and other hot carrier degradation and self‐heating. In particular, it has been reported that dopant diffusion and source‐drain series resistance (RSD) change occur under high VGS, high VDS, and short channel conditions, resulting in permanent failure of the IGZO TFT channel by forming positive feedback.

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“…In order for oxide TFTs to replace the Si CMOS backplane, the facile integration process of submicron scale devices should be developed on the glass substrate. Furthermore, short‐channel effects such as drain‐induced barrier lowering (DIBL), hot carrier effects (HCE), and inappropriate leakage current are major concerns 17–19 . Non‐planar architectures such as three‐dimensional (3D)‐vertical, recess channel, or FinFET structures can provide solutions to these fundamental issues.…”

Section: Introductionmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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P‐3: A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors

Cited by 23 publications

References 15 publications

P‐1.7: The Mechanisms and a Solution for Drain Current Drop in amorphous InGaZnO Thin‐Film Transistors

P‐1.7: The Mechanisms and a Solution for Drain Current Drop in amorphous InGaZnO Thin‐Film Transistors

P‐30: Thermally Activated and Field‐Enhanced Diffusion of Dopants in a‐InGaZnO TFTs Under Circuit Operations and Correlation to Device Stabilities

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

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