P-168 : LTPS PMOS Four-Mask Process for AMLCDs

Abstract

Simple p-channel poly-Si TFT (Thin Film Transistor) structure (PMOS 4mask structure) for AMLCD (active matrix liquid crystal display) was developed. Compared with a conventional PMOS 6mask process, two photo mask steps, passivation-hole mask and pixel mask, has been eliminated to create 4mask process. Both ELA (Eximer Laser Annealing) and SLS (Sequential Lateral Solidification) method were used for the formation of a poly-Si. By using PMOS 4mask process, 10.4-inch XGA (1024×768) AMLCD panel with integration of the gate-driver and demultiplexer was successfully realized.

Solution-based metal induced crystallization of a-Si

“…[1] Its applications in active matrix displays (AMDs) have been rapidly developed. [2,3] The functions and the degree of integration of active matrix liquid crystal displays have gone up almost by Moore's Law, [4] which is only ∼20 years later than the development trend of very large scale integration.…”