We have suggested and developed a novel 6 photo‐mask process for the p‐channel poly‐Si thin film transistor TFT panel fabrication of active matrix organic light‐emitting diode AMOLED. By removing power line Vdd and bank photo process, we simplified the fabrication process from 8 to 6 mask steps. The p‐channel TFT fabricated by the 6 photo‐mask process had a field effect mobility of ∼80 cm2/Vsec, a sub‐threshold voltage swing of ∼0.3 V/dec., and a threshold voltage of ∼−2 V. Using the 6 photo‐mask process, we have successfully realized a 7‐inch WVGA 720×480 AMOLED panel, which is controlled by the voltage driving method.

Simple p-channel poly-Si TFT (Thin Film Transistor) structure (PMOS 4mask structure) for AMLCD (active matrix liquid crystal display) was developed. Compared with a conventional PMOS 6mask process, two photo mask steps, passivation-hole mask and pixel mask, has been eliminated to create 4mask process. Both ELA (Eximer Laser Annealing) and SLS (Sequential Lateral Solidification) method were used for the formation of a poly-Si. By using PMOS 4mask process, 10.4-inch XGA (1024×768) AMLCD panel with integration of the gate-driver and demultiplexer was successfully realized.

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