Various structures of oxide TFT have been developed for the commercialization of high-end displays. Etch stopper structure were applied to both OLED and LCD products considering the uniformity and stability at Gen. 8 line. For larger OLED TV with higher resolution, self-aligned coplanar structure has been developed to minimize parasitic capacitance. Back-channel etched (BCE) structure has been also implemented to improve the display performance and the fabrication cost.

We have suggested and developed a novel 6 photo‐mask process for the p‐channel poly‐Si thin film transistor TFT panel fabrication of active matrix organic light‐emitting diode AMOLED. By removing power line Vdd and bank photo process, we simplified the fabrication process from 8 to 6 mask steps. The p‐channel TFT fabricated by the 6 photo‐mask process had a field effect mobility of ∼80 cm2/Vsec, a sub‐threshold voltage swing of ∼0.3 V/dec., and a threshold voltage of ∼−2 V. Using the 6 photo‐mask process, we have successfully realized a 7‐inch WVGA 720×480 AMOLED panel, which is controlled by the voltage driving method.