P‐169: A 31‐inch 4K2K Top‐emission OLED Display Using Good Uniformity and Long‐term Reliability Top‐gate Self‐aligned IGZO TFTs

Liu, Fang Mei; Wu, Yuanchao; Hsu, Yuan Jun; Ming, Yu; Im, Jang Soon; Lu, Po Yen

doi:10.1002/sdtp.12399

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…In particular, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs have attracted much attention for next-generation display devices because of their superior performance compared to conventional amorphous silicon TFTs across a number of parameters: high field-effect mobility, high uniformity over large areas, low leakage current, and high transparency in the visible light. − Despite these advantages, there are still some challenges to the use of a-IGZO TFTs in wearable, flexible display devices. One of the main issues is a high-temperature annealing process (>300 °C) because the a-IGZO film deposited by sputtering requires a thermal annealing process (i.e., the activation process) to obtain proper electrical characteristics. However, the high-temperature activation process damages flexible substrates such as poly(ethersulfone) (PES), poly(etheretherketone) (PEEK), and poly(ethylene naphthalate) (PEN), which have a relatively low glass-transition temperature .…”

Section: Introductionmentioning

confidence: 99%

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Lee

Tak

Kang

et al. 2020

ACS Appl. Mater. Interfaces

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Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal–oxygen (M–O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 °C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M–O bonds and the carrier concentration via radical reactions, even at 200 °C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 °C) from 8.25 to 12.81 cm2/(V·s), 2.85 × 107 to 1.21 × 108, 6.81 to 3.24 V, and −6.68 to −4.93 V, respectively.

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Section: Introductionmentioning

confidence: 99%

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Lee

Tak

Kang

et al. 2020

ACS Appl. Mater. Interfaces

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“…Finally, SiO2 passivation (PV) was formed, which is used as a protection layer to prevent the diffusion of H2O and O2 molecules to active layer. The detailed TFT fabrication process is described elsewhere [7].…”

Section: Tg-tftsmentioning

confidence: 99%

67‐1: Invited Paper: Design of an Advanced Bottom‐emission AMOLED Display for TVs with High‐PPI and Large Size

Wu¹,

Xue²,

Han³

et al. 2019

Symp Digest of Tech Papers

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Top-gate typed amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors (TFTs) and a technologically advanced transparent storage capacitance structure have been successfully employed in pixel circuits. The design procedure was systematically studied. Eventually, a 15-inch gate-driver-on-array (GOA) drived active matrix organic light-emitting diode (AMOLED) display was demonstrated with a high resolution of 147 ppi.

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“…Amorphous metal oxide semiconductor (AOS) thin-film transistors (TFTs), which are represented by amorphous InGaZnO (a-IGZO) TFTs, are widely used in large active matrix organic light-emitting diode (AMOLED) displays because of their high mobility (∼10 cm 2 /V s), low-cost processing, and large-area uniformity. − Due to their low-temperature processing (<350 °C), AOS TFTs have a competitive edge as a backplane material for soft electronic devices such as wearable healthcare devices, e-skins, and foldable/rollable smart phones. − Compared to rigid glass substrates, flexible/stretchable polymer substrates for soft electronic devices have lower thermal stability. , Thus, they require a lower-temperature panel fabrication process. Compared to the AOS TFTs, low-temperature poly-silicon (LTPS) TFTs exhibit high mobility characteristics (>100 cm 2 /V s) but are limited by a relatively high process temperature (>350 °C) and high power consumption. − Additional advantages of AOS TFTs include their high transparency and low off-state current based on the large optical band gap (>3 eV) characteristics and very low minority carrier (hole) concentration. − Based on these benefits, AOS TFTs can be applied to all-transparent next-generation displays and wearable electronic devices. , …”

Section: Introductionmentioning

confidence: 99%

Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application

Han

Lee

Kim

et al. 2021

ACS Appl. Electron. Mater.

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In this work, we examined the mechanical durability of island-type a-IGZO thin-film transistors (TFTs). Island TFTs were fabricated on polyimide (PI) islands and were transferred to a thermoplastic polyurethane (TPU) film. In repeated bending tests with a 1.5 mm bending radius, island TFTs showed less electrical property deterioration than TFTs on a PI film. We confirmed that the TPU, which has a lower elastic modulus compared to PI, effectively reduced the curvature of PI island even under the same bending test conditions. Furthermore, an organic passivation layer was applied on the upper part of the PI island. The 3 μm thick organic passivation layer made the TFT layer more stable against bending and elongation stress. Island TFTs with an organic passivation layer showed a change in the saturation mobility of only −2.3% and a change in the threshold voltage of −0.22 V even after 250 000 repetitive bending tests. Additionally, no change in electrical properties was observed even after 10 000 repeated stretching test cycles under 30% uniaxial elongation. Finally, we fabricated island-type logic circuits based on a-IGZO TFTs for wearable electronic applications. Using the organic passivation layer, we showed that the NMOS pseudoinverter and NAND gate also operated without significant deterioration in 100 000 repeated bending cycles and 5000 repeated stretching cycles. After applying repeated mechanical stresses, the high output voltage (V OH) and low output voltage (V OL) of the inverter only changed from 8.85 to 8.93 V and from 0.44 to 0.50 V, respectively. In NAND gates, V OH and V OL only changed slightly from 8.46 to 8.56 V and from 0.45 to 0.55 V, respectively.

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P‐169: A 31‐inch 4K2K Top‐emission OLED Display Using Good Uniformity and Long‐term Reliability Top‐gate Self‐aligned IGZO TFTs

Cited by 8 publications

References 6 publications

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

67‐1: Invited Paper: Design of an Advanced Bottom‐emission AMOLED Display for TVs with High‐PPI and Large Size

Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application

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