P-202: Novel Electron Transporter and Hole Injector for OLEDs with Improved Device Characteristics and Longer Lifetime

Abstract

The search for stable electron transporters and hole injectors has become particularly intense over the last 12 months as OLED manufacturers are poised to start production of OLED panels. We report here a proprietary electron transporter (E246), which reduces the operating voltage, increases the efficiency and the lifetime of OLEDs made of fluorescent or phosphorescent systems when compared with Alq3 as an electron transporter. We also report a novel proprietary hole injector (buffer, E9363) which also reduces the operating voltage, increases the efficiency and doubles the lifetime compared to CuPC. E246 has been validated on both ULVAC and Tokki vacuum evaporators. These two materials are now available commercially for display manufacturers.

54‐4: Intense Pulsed Light Annealed ZnO for the Production of High Efficiency Inverted QLEDs

“…We have been interested in QLEDs for the past four years [20][21] where the ZnO derived from sol-gel were employed as the electron injector/electron transporter which requires 30-60 minutes of thermal annealing at least at 120 0 C. We were interested in exploring if the ZnO derived from sol-gel can be annealed by IPL in millisecond time scale without any deterioration in the device characteristics and indeed if any improvement can be obtained. We demonstrate here that IPL can successfully be employed to produce high efficiency QLEDs.…”

Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)

“…Colloidal quantum dot light emitting devices have become one of the most exciting candidates for the next generation displays and solid state lighting as they offer colour tunability simply by changing the size and they are solution processable by spin coating, inkjet printing, slot coating or spray coating. [12][13][14][15][16][17][18][19][20][21]26 Colloidal semiconductor nanocrystals (quantum dots, QDs) are composed of an inorganic core (made up of a few hundred to a few thousand atoms) surrounded by an inorganic shell, which in turn is surrounded by an organic surfactant molecules (ligands). Typical quantum dots 20 include CdSe/ZnS, InP/ZnS, perovskites and CuInS 2 .…”

“…Typical quantum dots 20 include CdSe/ZnS, InP/ZnS, perovskites and CuInS 2 . Research on electroluminescence of colloidal quantum dots is gathering momentum as the colour requirement for Rec 2020 (ITU-R-BT2020) cannot be achieved by means of state of art OLED materials 19 with simple device architectures. The usual OLEDs based on uorescent, phosphorescent and thermally activated delayed uorescent emitters only achieve roughly 90% of NTSC standards.…”

“…[32][33][34] Aluminium, Mg, Li and Cs doped ZnO were also found to be efficient electron injectors for QLEDs and perovskite QLEDs. [35][36][37][38] We have been interested in QLEDs for the past four years 17,19,21,26 where the ZnO derived from sol-gel were employed as the electron injector/electron transporter which requires 30-60 minutes of thermal annealing at 120 C or above. We were interested in exploring if the ZnO derived from sol-gel can be annealed by IPL in millisecond time scale without any deterioration in the device characteristics and indeed if any improvement can be obtained.…”

Investigating the Photoelectrochemistry of Transparent ZnO Grown on ITO/Plastic for Flexible Photoelectrochemical Cell and Photovoltaic Application

“…Some of the examples include solid state [1] for highly efficient PV cells, or liquid/solid state [3][4][5] inorganic/organic hybrid [6] solar cells for flexible, cost efficient and large area solar cells. Flexible PV study is particularly popular as bendable substrate will allow cells to be more mobile as it can be carried with greater safety [7]. Furthermore, they can be applied to more geometrically challenging sites where traditional crystalline devices are not suitable.…”