P‐21: High Stability and Device Design for Self‐Heating Reduction of a‐Si:H TFT

Abstract

High performance a‐Si:H TFT with properly SiNx deposition and low deposition rate of a‐Si:H for high stability has been improved. Otherwise, large device dimension accompany milliamperes current caused joule heating degradation device reliability. Fine design for promoting reliability for self‐heating reduction was also investigated. Square‐like a‐Si:H active layer induces higher turn‐on current than rectangular‐like one degraded the device reliability. Applied the good performance TFTs to driver application is good enough for high temperature of 85 °Coperation.

64.2 WITHDRAWN: 64.3: High‐Transmittance Slim‐border 720p a‐Si TFT‐LCD for Mobile‐Display Applications

“…Moreover, lowering fabrication cost is one of the most vital strategies to maintain the TFT-LCD display market. Therefore, the gate driver on array by integration of the a-Si TFT device as gate driving circuit into the TFT array backplane has been drawing tremendous attention in active matrix display [1][2][3][4]. First chief advantage of a-Si gate driver on array is extremely slim panel border which can be achieved by well-designed shift register circuit.…”