P.22: Improving Switching Characteristics of Amorphous‐InGaZnO₄ Thin‐Film Transistors by Dual‐Gate Driving

Abstract

When the top‐gate and bottom‐gate of a dual‐gate amorphous‐InGaZnO4 (a‐IGZO) thin‐film transistor (TFT) are electrically tied together (dual‐gate driving), drain current (IDS) increases fivefold compared to single‐gate driving (i.e. when driving with either bottom‐gate or top‐gate), resulting in significant enhancement of the driving ability of TFTs for active‐matrix display (AMD) applications. The increase in IDS is attributed to better gate drive, achieved through the formation of two parallel channels; one at the top surface and the other at the bottom surface of the semiconductor.

P‐1.14: The Influence of Bottom gate Dielectric Roughness on the Performance of Double‐Gate a‐IGZO Thin Film Transistors

“…Recently, in order to get larger on state currents and mobility, double gate TFTs gain popularity. Further more, double gate TFTs have stronger gate control, better stability, higher on-off current ratio(Ion/off), and lower subthreshold swing [4]- [7]. However, we find that in double gate a-IGZO TFTs, mobility of top gate mode is smaller than mobility of bottom gate mode [5] [8] and the mobility of double gate mode also become lower than normal single gate TFTs with same active layer in our laboratory.…”