P‐25: New Polymer‐Capped a‐IGZO TFT with High Sensitivity to Visible Light for the Development of Integrated Touch Sensor Array

Zan, Hsiao‐Wen; Hsueh, Hsiu Wen; Kao, Shih Chin; Chen, Wei Tsung; Ku, Ming Che; Tsai, Wu Wei; Tsai, C. C.; Meng, Hsin‐Fei

doi:10.1889/1.3499931

Cited by 9 publications

(5 citation statements)

References 6 publications

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“…However, as reported by other research groups, the electrical characteristics of the IGZO TFTs degrade greatly when they are exposed to water for a long time [21,22]. In addition, the sensor properties of an OxTFT-based device are defined not only by the Vth shift, but also by the increased drain current [23][24][25]. From the transfer curves shown in figure 1(b), it is clear that the drain current did not increase.…”

Section: The Effect Of Water Exposure On the Bare Igzo Semiconductor ...supporting

confidence: 51%

Controllable liquid water sensitivity of polymer-encapsulated oxide thin-film transistors

Yu¹,

Kim²,

Park³

et al. 2020

Semicond. Sci. Technol.

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We demonstrated the controllable liquid water sensitivity of polymer-encapsulated oxide-based thin-film transistors (OxTFTs). The oxide active channels of the fabricated TFTs were utilized as water-sensitive layers. The OxTFTs were encapsulated with several polymers as water controlling layers (WCLs) to investigate and optimize the water sensitivity. It was found that the surface energy and porosity of the WCL significantly affect the water-dependent electrical characteristics of the OxTFTs. By employing poly(vinylidene-trifluoroethylene) (P(VDF-TrFE)) as a WCL and annealing the chosen polymer properly, we achieved a continuous shift of the threshold voltage even after several hours of direct exposure to the liquid phase of water which is crucial for sensor properties of the OxTFTs. The device using P(VDF-TrFE) as the WCL exhibits long-term stable detection characteristics and repeatability, demonstrating its applicability as a low-cost soil moisture sensor.

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Section: The Effect Of Water Exposure On the Bare Igzo Semiconductor ...supporting

confidence: 51%

Controllable liquid water sensitivity of polymer-encapsulated oxide thin-film transistors

Yu¹,

Kim²,

Park³

et al. 2020

Semicond. Sci. Technol.

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“…Even for UV detection, the long decay time after light off, which is known as the persistent photoconductivity (PPC), 3 would still hinder its application in a circumstance where fast response or a high frame rate is needed. To extend its ability for photodetection, hybrid IGZO phototransistors were investigated with different types of light-absorber capping layers, such as polymer (P3HT and PCDTBT), 4,5 quantum dots (CdSe QDs, graphene dots, CdSe/ZnS QD, PbS QD), 6−9 and two-dimensional materials (MoS 2 , WSe 2 ). 10,11 Organolead halide perovskite, such as MAPbI 3 , has been actively investigated in optoelectronic applications, due to its outstanding features such as a broad absorption range, tunable bandgap, high charge carrier mobility, and long carrier diffusion length.…”

Section: Introductionmentioning

confidence: 99%

“…Even for UV detection, the long decay time after light off, which is known as the persistent photoconductivity (PPC), would still hinder its application in a circumstance where fast response or a high frame rate is needed. To extend its ability for photodetection, hybrid IGZO phototransistors were investigated with different types of light-absorber capping layers, such as polymer (P3HT and PCDTBT), , quantum dots (CdSe QDs, graphene dots, CdSe/ZnS QD, PbS QD), − and two-dimensional materials (MoS 2 , WSe 2 ). , …”

Section: Introductionmentioning

confidence: 99%

Enhanced Detectivity and Suppressed Dark Current of Perovskite–InGaZnO Phototransistor via a PCBM Interlayer

Yan

Zou

et al. 2018

ACS Appl. Mater. Interfaces

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Hybrid phototransistors based on InGaZnO (IGZO) metal oxide thin-film transistors (TFT) and a photoabsorbing capping layer such as perovskite (MAPbI 3 ) are a promising low-cost device for developing advanced X-ray and UV flat-panel imagers. However, it is found that the introduction of MAPbI 3 inevitably damages the IGZO channel layer during fabrication, leading to deteriorated TFT characteristics such as off-current rising and threshold voltage shift. Here, we report an effective approach for improving the performance of the perovskite−IGZO phototransistor by inserting a [6,6]-phenyl C61-butyric acid methyl ester (PCBM) or PCBM:PMMA interlayer between the patterned MAPbI 3 and IGZO. The interlayer effectively prevents the IGZO from damage by the perovskite fabrication process, while allowing efficient charge transfer for photosensing. In this configuration, we have achieved a high-detectivity (1.35 × 10 12 Jones) perovskite−IGZO phototransistor with suppressed off-state drain current (∼10 pA) in the dark. This work points out the importance of interface engineering for realizing higher performance and reliable heterogeneous phototransistors.

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“…9) Several researchers attempted to generate a photocurrent on oxide TFTs with illumination by visible light by adding polymer and metal nanoparticles to the surface of oxide semiconductors. 10,11) Meanwhile, colloidal quantum-dots (QDs) have been considered as potential semiconductors for light emitting and absorbing devices. [12][13][14] The band gap of QDs can be controlled easily by changing their size, 15) which allowed a fullcolor QDs light emitting diode with high luminous efficiency to be successfully developed.…”

Section: Introductionmentioning

confidence: 99%

Red/green/blue selective phototransistors with a hybrid structure of quantum-dots and an oxide semiconductor

Kim

Park

et al. 2018

Jpn. J. Appl. Phys.

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Color-selective phototransistors have been developed using a hybrid film of quantum-dots (QDs) and an oxide semiconductor. The zinc oxide (ZnO) phototransistor with QDs with a 2.96 eV band gap showed a photocurrent when illuminated by 450 nm light. The device with QDs with a 2.28 eV band gap started to show a photocurrent under 520 nm light, and the device with QDs with a 1.95 eV band gap showed a photocurrent under light with a wavelength of 635 nm. The photocurrent with low-energy photons, such as visible light, originated when small band-gap QDs absorbed and converted visible light into photoelectrons, and the transparent wide band-gap ZnO supplied a conductive channel in the conduction band to allow the photocurrent to flow through the device. Based on those results, we developed a color-selective phototransistor that can separate red, green, and blue light using a hybrid structure of ZnO and multilayer QDs. The device showed photoresponsivity values of 0.032, 0.053, and 0.26 mA/W to red, green, and blue light, respectively, which are different enough to distinguish the color of the visible light. Therefore, we fabricated and characterized a photogating inverter to convert the color of visible light into an electrical voltage signal. Our results show that the hybrid film of ZnO and QDs could be a feasible way to develop a highly transparent, full-color image sensor.

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P‐25: New Polymer‐Capped a‐IGZO TFT with High Sensitivity to Visible Light for the Development of Integrated Touch Sensor Array

Cited by 9 publications

References 6 publications

Controllable liquid water sensitivity of polymer-encapsulated oxide thin-film transistors

Controllable liquid water sensitivity of polymer-encapsulated oxide thin-film transistors

Enhanced Detectivity and Suppressed Dark Current of Perovskite–InGaZnO Phototransistor via a PCBM Interlayer

Red/green/blue selective phototransistors with a hybrid structure of quantum-dots and an oxide semiconductor

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