P‐27: RF‐Sputtered Oxide TFTs and Circuits on Engineered Aluminum Substrates

Abstract

High performance thin film transistor (TFT) arrays and circuits on engineered aluminum substrates are reported. Aluminum substrates were engineered to have a smooth insulating surface suitable for device fabrication upon them. Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors with an average field effect mobility of about 10 cm 2 /Vs, threshold voltage of 5 V, gate leakage current of 10 -13 and on/off current ratio of 10 8 are demonstrated. Metal oxide transistors and circuits built on aluminum substrates open a route for future applications in large area flexible electronics.