P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Abstract

Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in‐situ/ex‐situ measurement and chemical/physical analysis.

20.1: Flexible AMOLED Display and Gate‐driver with Self‐aligned IGZO TFT on Plastic Foil

“…for 2000s constant gate-bias at +/-20V, the Von shift remained below 0.5V. This is comparable to previous published results for SA TFT [5].…”