P‐70: Resolving Bump Issue on Copper Surface in GI Hole of TFT‐LCDs

Abstract

This paper introduces a phenomenon of the SD bump on the gate layer MoNiTi(bottom)/Cu(top) in GI hole because of the worsening of adhesion between SD layer and gate layer after the copper oxides form on the top copper surface of gate layer. We investigated the relationship of the SD bump with TFT array processes and solved the SD bump issue by reducing the power, gas flow ratio (O2/SF6) or O.E.(%) time of GI etching process. Because these changes of GI etching parameter can decrease the amount and lower the energy of O * and S * free radical in GI etching chamber.