P‐77: Novel and Highly Reliable XeF and KrF Excimer Laser Annealing for Reducing the Cost of Flat Panel Display Equipment

Imokawa, Kaname; Tanaka, Satoshi; Ashikawa, Koji; Watanabe, Yuichi; Nagashima, Takayuki; Maekawa, Junichi; Katsuumi, Hisakazu; Umeda, Hiroshi; Nohdomi, Ryoichi; Mutoh, T.; Suzuki, Atsushi; Fujimoto, Junichi; Mizoguchi, Hideaki

doi:10.1002/sdtp.11941

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Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Imokawa

Kurashige

Suwa

et al. 2020

IEEE J. Electron Devices Soc.

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We demonstrated that p-and n-type activation layers can be formed in Si films by laser doping with H 3 PO 4 solution and Al 2 O 3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10 19 cm −3 in Si films. In addition, generations of the activation carriers for n-and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.INDEX TERMS Low temperature poly Si (LTPS), thin-film-transistor (TFT), excimer laser annealing (ELA), laser doping, chemical solution coating.

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