P‐79: Characterization of Narrow‐Channel TFT Using Asymmetric Halftone Exposure

Chun, Ki-Chul; Woo, Jae-Hyuck; Jung, Deuk-soo; Park, Mungi; Kim, Hwan; Lim, Byoung-Ho; Yu, Sang-Jeon

doi:10.1889/1.3069435

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“…6) Furthermore, statistical data of TFT channel length from an optimized asymmetric slit size, and detailed TFT characteristic data are shown.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Short-Channel Thin-Film Transistor Using Conventional Photolithography

Cheon¹,

Woo²,

Jung³

et al. 2009

jjap

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Hydrogenated amorphous silicon thin-film transistors (TFTs) with channel length below 4 mm, were successfully fabricated using a new halftone exposure technique combined with conventional photolithography. A concept of asymmetric double-slit design was applied to decrease channel length (L). TFTs having a channel length down to 3 mm was successfully fabricated, and showed better output capability with minor changes in mobility and off-state current. #

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“…6) Furthermore, statistical data of TFT channel length from an optimized asymmetric slit size, and detailed TFT characteristic data are shown.…”

Section: Introductionmentioning

confidence: 99%

“…In this study, the effect of slit sizes in an asymmetric slit mask on of photo-resolution on half-tone formation is proposed with the previous experimental results. 6) Furthermore, statistical data of TFT channel length from an optimized asymmetric slit size, and detailed TFT characteristic data are shown.…”

Section: Introductionmentioning

confidence: 99%