p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

Chowdhury, Nadim; Lemettinen, Jori; Xie, Qingyun; Zhang, Yuhao; Rajput, Nitul S.; Peng, Xiang; Cheng, Kai; Suihkonen, Sami; Then, Han Wui; Palacios, Tomás

doi:10.1109/led.2019.2916253

Cited by 106 publications

(45 citation statements)

References 23 publications

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“…Step: between the performance of current HTDTs and their theoretical limits, which highlights the significant potential for improvement of this technology. Moreover, the HTDTs in this work present a much superior performance compared to state-of-the-art p-channel GaN transistors, achieving 6-times higher current density, 4-orders of magnitude higher on-off ratio and more than 6-times higher thermal conductivity [24]- [26]. The much larger theoretical BFOM of HTDTs compared to that of p-channel GaN (Fig.…”

Section: Resultsmentioning

confidence: 84%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate highperformance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization of the microwave-plasma chemical-vapor-deposition of diamond on GaN, the polycrystalline layer was hydrogenated to form a 2D hole-gas at the surface, acting as p-channel. Relying on a rather simple fabrication process, these devices exhibited excellent electrical and thermal performances with on-off ratio of 10 9 , breakdown voltage of 400 V, specific on-resistance of 84 mΩ•cm 2 , and thermal conductivities higher than 900 W/m•K. The presented hetero-integration technology provides a promising platform for future complementary logic operations, gate drivers, complementary power switch applications such as integrated power inverters and converters, simultaneously serving as a very efficient thermal management solution in high power density applications.

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Section: Resultsmentioning

confidence: 84%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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“…However, the challenges of the monolithic integration of the p-type GaN FETs with n-type GaN FETs along with lack of high-performance of p-type GaN FETs are the major obstacle towards achieving high efficiency GaN-based ICs. A various epitaxial structures of p-type GaN FETs have been demonstrated [110][111][112][113][114][115][116][117]. A GaN complementary inverter circuit comprising of both E-mode n-type GaN FET and p-type GaN FET monolithically integrated on Si Substrate without regrowth technology was also demonstrated [118].…”

Section: Gan-based Cmos Technologymentioning

confidence: 99%

“…A very high density of 2D hole gas (2DHG) induced by the polarization at the interface of GaN/AlN was discovered [119] which led to the development of p-channel heterostructure field effect transistors (HFETs) that reach the linear current density of 100 mA/mm [112]. A p-channel MISFET with a recessed-gate was grown by metalorganic chemical vapor deposition (MOCVD) using p-GaN/AlGaN/GaN hetrostructure on Si substrate [113,118]. The fabricated structure contains both 2-dimensional electron gas (2DEG) and 2-dimensional hole gas (2DHG) without regrowth technology which is suitable for implementing GaN-based complementary circuit.…”

Section: Gan-based Cmos Technologymentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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“…The main problems are the effective doping, poor contacts, and low hole mobility [3], [18], [32]. Only n-channel devices are industrially available, and there is active research on p-channel devices [33]₋ [35]. Its main selling points are the high switching frequency and consequently the lower total system volume and, often, the total system cost.…”

Section: B Maturity Of Wbg Materials Technologiesmentioning

confidence: 99%

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

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The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance of power semiconductor devices, where massive industrial investments and intense research efforts are being devoted to new wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). The electrical and thermal properties of SiC and GaN enable the fabrication of semiconductor power devices with performance well beyond the limits of silicon. However, a massive migration of the power electronics industry towards WBG materials can be obtained only once the corresponding fabrication technology reaches a sufficient maturity and a competitive cost. In this paper, we present a perspective of power electronics based on WBG semiconductors, from fundamental material characteristics of SiC and GaN to their potential impacts on the power semiconductor device market. Some application cases are also presented, with specific benchmarks against a corresponding implementation realized with silicon devices, focusing on both achievable performance and system cost.

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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

Cited by 106 publications

References 23 publications

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

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