p-Channel MODFET's using GaAlAs/GaAs two-dimensional hole gas

Tiwari, Sandip; Wang, W.I.

doi:10.1109/edl.1984.25935

Cited by 39 publications

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“…The earliest work was by groups at Bell Laboratories and IBM that in 1984 independently reported the first p-channel III-V FETs. 3,4 A subsequent investigation with GaAs channels and a gate length of 0.25 μm obtained a cutoff frequency ( f T ), defined as the frequency at which the current gain of the transistor is unity, of 11 GHz and an estimated hole velocity of 1.7 × 10 6 cm/s. 5 Table I suggests that the strategy of moving to the right in Figure 1 that has been so effective in improving n-channel devices also should improve the performance for p-channel devices.…”

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Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Bennett¹,

Ancona²,

Boos³

2009

MRS Bull.

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Research in n-channel field-effect transistors based upon III-V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III-V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1-2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm 2 /Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n-and p-channel transistors.

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confidence: 99%