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          -channel thin-film transistor using p-type oxide semiconductor, SnO

Ogo, Yoichi; Hiramatsu, Hidenori; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

doi:10.1063/1.2964197

Cited by 619 publications

(591 citation statements)

References 22 publications

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“…In the binary compound, SnO, the hole effective mass shows strong anisotropy reflecting the layered structure [7]. This gives rise to strongly anisotropic hole transport behavior.…”

Section: Resultsmentioning

confidence: 99%

“…These include low-valence state cations of group III, IV, V metals (for instance Sn +2 , Pb +2 , Bi +3 , Tl + , etc.). An example is the SnO binary compound [7] (n.b., Sn compounds are particularly attractive because Sn is a relatively low cost, benign ingredient). Ternary phases have also been studied, with promissing results both for transparent conducting and electronic application.…”

Section: Introductionmentioning

confidence: 99%

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Sn(II)-Containing Phosphates as Optoelectronic Materials

Zhang

et al. 2016

Chem. Mater.

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We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials SnnP2O5+n (n=2, 3, 4, 5) and a previously unreported compound, SnP2O6 (n=1), which we find using global optimization structure prediction. The electronic structure calculations indicate that these compounds all have large band gaps above 3.2 eV, meaning their transparency to visible light. Several of these compounds show relatively low hole effective masses (∼2-3 m0), comparable the electron masses. This suggests potential bipolar conductivity depending on doping. The dispersive valence band-edges underlying the low hole masses, originate from the anti-bonding hybridization between the Sn 5s orbitals and the phosphate groups. Analysis of structure-property relationships for the metastable structures generated during structure search shows considerable variation in combinations of band gap and carrier effective masses, implying chemical tunability of these properties. The unusual combinations of relatively high band gap, low carrier masses and high chemical stability suggests possible optoelectronic applications of these Sn(II) phosphates, including p-type transparent conductors. Related to this, calculations for doped material indicate low visible light absorption, combined with high plasma frequencies.

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“…In the binary compound, SnO, the hole effective mass shows strong anisotropy reflecting the layered structure [7]. This gives rise to strongly anisotropic hole transport behavior.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sn(II)-Containing Phosphates as Optoelectronic Materials

Zhang

et al. 2016

Chem. Mater.

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“…[4][5][6] However, nowadays, the materials still suffer from a low conductivity as compared to their n-type counterparts. 7,8 Therefore, it is crucial to find ways to improve the hole transport.…”

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confidence: 99%

Enhancement of p-type mobility in tin monoxide by native defects

Granato

Caraveo-Frescas

Alshareef

et al. 2013

Applied Physics Letters

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Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

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“…[1] Following the discovery of SnO 2 with a similar unique combination of properties, [2] several patents were filed in the 1940s to employ TCOs as antistatic coatings and transparent heaters-long before the discovery of the now well-known Sn-doped In 2 O 3 (ITO) and Al-doped ZnO, [3] widely employed as flat panel display electrodes in the past decades. Despite great technological demand for TCOs [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and extensive experimental efforts to improve the conductivity via impurity doping, [21,22] to tune the work function and carrier concentration via cation composition, [23][24][25][26][27][28] to achieve two-dimensional transport via heterointerfaces, [29] and to p-dope the oxides toward active layers of transparent electronics, [30][31][32] theoretical understanding of these fascinating materials has lagged behind significantly. The first electronic band structure of ITO was calculated in 2001; [33] the role of native defects in prototype TCOs was understood after 2002; [34][35][36][37] the properties of multi-cation TCOs were first considered in 2004 [37][38][39][40][41]…”

mentioning

confidence: 99%

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Medvedeva

Buchholz

Chang

2017

Adv Elect Materials

146

144

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conductivity. [1] Following the discovery of SnO 2 with a similar unique combination of properties, [2] several patents were filed in the 1940s to employ TCOs as antistatic coatings and transparent heaters-long before the discovery of the now well-known Sn-doped In 2 O 3 (ITO) and Al-doped ZnO, [3] widely employed as flat panel display electrodes in the past decades. Despite great technological demand for TCOs [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and extensive experimental efforts to improve the conductivity via impurity doping, [21,22] to tune the work function and carrier concentration via cation composition, [23][24][25][26][27][28] to achieve two-dimensional transport via heterointerfaces, [29] and to p-dope the oxides toward active layers of transparent electronics, [30][31][32] theoretical understanding of these fascinating materials has lagged behind significantly. The first electronic band structure of ITO was calculated in 2001; [33] the role of native defects in prototype TCOs was understood after 2002; [34][35][36][37] the properties of multi-cation TCOs were first considered in 2004 [37][38][39][40][41][42] followed by modeling of novel TCO hosts [43,44] and spin-dependent transport in transition-metal-doped TCOs; [45] the nature of the band gap in In 2 O 3 was clarified in 2008; [46] and a first highthroughput search for p-type TCOs was performed in 2013. [47] Complex oxides that consist of multiple post-transition metals, such as InGaZnO 4 , have recently become competitive with silicon as the active transistor layer to drive arrays of pixels in large area displays. [9,[13][14][15][16][17][18][19]24] As the billion-dollar display industry moves forward, the amorphous phase of the complex oxides is favored both for flexible and high-resolution display applications. [13][14][15][16][48][49][50][51][52][53][54][55][56][57][58][59] The unique properties of AOSs were first demonstrated in 1990, [60] and the research area has been growing exponentially since then. Unlike Si-based semiconductors, AOSs were shown to exhibit optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts. [48][49][50][51][52][53][54][55][56][57][58] Table 1 summarizes the key physical properties of best-performing crystalline TCOs and AOSs; the differences (or the lack thereof) between the two will be discussed in detail in the respective sections below.

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p -channel thin-film transistor using p-type oxide semiconductor, SnO

Cited by 619 publications

References 22 publications

Sn(II)-Containing Phosphates as Optoelectronic Materials

Sn(II)-Containing Phosphates as Optoelectronic Materials

Enhancement of p-type mobility in tin monoxide by native defects

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

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