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Tin monoxide (SnO) is a stable p-type oxide semiconductor. This paper reports electrical properties, electronic structures, and thin-film transistors (TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The Hall mobility and the hole density of the epitaxial films were 2.4 cm 2 V −1 s −1 and 2.5 × 10 17 , respectively. X-ray photoelectron spectroscopy (PES) indicated that the closed-shell 5s 2 orbitals of Sn 2+ ions heavily contribute to the hole conduction path in SnO. Top gate type TFTs (W/L = 300/50 m) employing 20 nm thick SnO channels exhibited field-effect mobilities µ sat = 0.7 cm 2 V −1 s −1 and µ lin = 1.3 cm 2 V −1 s −1 , which are larger by two orders of magnitude than those reported for pchannel oxide TFTs to date. On/off current ratios were ∼10 2 and subthreshold voltage swings (S) ∼7 V/decade. The parameters required for TFT simulations were estimated by ultraviolet PES and first-principles calculations. The TFT simulations indicated that subgap hole trap density in the SnO channel is >10 19 cm −3 , which limits the TFT mobilities and the S values.

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