P-doped germanium nanowires with Fano-broadening in Raman spectrum

He, Liang; Xiong, Boli; Zhou, Peng; Luo, Wen; Song, Peng; Wang, Xukun; Hao, Zhimeng; Yang, Xiao; Niu, Chaojiang; Tian, Xiaocong; Yan, Mengyu; Mai, Liqiang

doi:10.1007/s11595-016-1329-4

Cited by 8 publications

(6 citation statements)

References 32 publications

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“…Previous reports on Ge nanowires have shown that a broad peak in the vicinity of ≈ 340-350 cm -1 is associated with P-Ge bond. [38,39] In our case, the formation of this peak is aligned with phosphorus doping of GeS. Accordingly, the observation of this broad peak is strong evidence that the observed VdW doping here is caused by phosphorus bonding with Germanium.…”

Section: Discussionsupporting

confidence: 75%

van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors

Alhazmi

Alolaiyan

Alharbi

et al. 2021

Adv Funct Materials

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van der Waals semiconductors have proven to be exceptional for electronic and photonic applications. Although most research is extensively focused on some transition metal dichalcogenides materials (MX 2 ) such as MoS 2 , WS 2 , WS e2 , and MoSe 2 , studies on 2D metal monochalcogenides such as germanium sulfide (GeS) has been widely under investigated, mainly due to the high contact resistance GeS devices exhibit. Here, a van der Waals field-effect transistor (VdW-FET) based on GeS is investigated and resonant tunneling behavior is shown at room temperature due to VdW doping via black phosphorus (BP), evident by the observation of multiple decades of negative differential resistance (NDR) during doping transient state. These NDR decades are caused by confinement of carriers inside the double barrier quantum well, which allows tunneling to occur for discrete energy levels. Moreover, a noticeable conductivity switch from a low p-type to a high n-type is observed, with a conductivity enhancement of 2 orders of magnitude compared to pristine GeS devices. The underlying mechanism behind the observed NDR and the conductivity switch is discussed and it is shown that these phenomena are likely caused by phosphorus doping due to BP sublimation, evident by the detected P-Ge Raman peak in the measured Raman spectra. The results can open doors for electrical oscillators and switching devices for the next generation of nanoelectronics.

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Section: Discussionsupporting

confidence: 75%

van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors

Alhazmi

Alolaiyan

Alharbi

et al. 2021

Adv Funct Materials

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“…The strong interest in 1D semiconductor nanowires (NWs) is motivated by their peculiar mechanical, optical and electric properties, that are distinctly different from those of their bulk material counterparts [1][2][3]. The extremely high ratio of surface area to volume of NWs makes them very promising candidates for chemical and gas detectors, because their surface can be functionalized with specific molecules to sense a particular target [4,5].…”

Section: Introductionmentioning

confidence: 99%

Growth of germanium nanowires with isobuthyl germane

et al. 2018

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We demonstrate the feasibility of the use of isobutyl germane, a novel germanium source, for the vapor–liquid–solid growth of germanium nanowires (NWs) on Si (111) substrates, using a thin gold layer as catalyst. The density and the diameter of the NWs were controlled by varying the Au layer thickness and the isobutyl germane flow. The NWs grow along (111) directions and show perfect crystallinity and lengths from several hundreds of nm to 3–4 μm. The use of isobutyl germane gives a considerable technological advantage in the growth of germanium NWs since it is a safer and more manageable germanium source and it allows to grow Ge NWs in a standard vapor phase epitaxy system at 400 °C.

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“…Soil symbols are commonly depicted through land-type boundaries, explanatory symbols, background colors, and explanatory notes or through mutual coordination. The electromagnetic environment, temperature, and humidity are often represented using isolines [32]. Artificial environmental elements are usually depicted as dot symbols representing independent features.…”

Section: Map Symbol Specificationmentioning

confidence: 99%

Research on the Cyberspace Map and Its Conceptual Model

Zhang,

Wang,

You

et al. 2023

IJGI

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The cyberspace map, as one of the important tools for describing cyberspace, provides a visual representation of the dynamic and elusive nature of cyberspace. It has become a research hotspot in multiple disciplinary fields. Compared with traditional maps, cyberspace maps lack the guidance of cartography theory and have not yet formed a unified understanding. Clarifying the concept of the cyberspace map and developing a conceptual model of it could enhance people’s unified understanding of cyberspace. Drawing from the perspective of cartography, this paper analyzes the current situation of cyberspace map research, first discussing the characteristics and definition of the cyberspace map and then proposing the conceptual model of a cyberspace map. This model elaborates on the types of map elements and their specific composition, the strength of their element–space association, the mapping of relationships between elements, element symbolization, and map expression. Then, based on the model proposed in this paper, typical maps are compared and analyzed, and design suggestions are provided. Finally, the entire article is summarized. This paper aims to adapt the development trend of cartography to the ternary space, clarify the basic concept of the cyberspace map, promote the development of cyberspace mapping theory, and lay the foundation for future research.

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P-doped germanium nanowires with Fano-broadening in Raman spectrum

Cited by 8 publications

References 32 publications

van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors

van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors

Growth of germanium nanowires with isobuthyl germane

Research on the Cyberspace Map and Its Conceptual Model

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