P/He ion implant isolation technology for AlGaN/GaNHFETs

Hanington, G.; Hsin, Yue-Ming; Liu, Q.Z.; Asbeck, P.M.; Lau, S. S.; Khan, M. Asif; Yang, Jinwei; Chen, Q.

doi:10.1049/el:19980091

Cited by 44 publications

(16 citation statements)

References 7 publications

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“…7 for the sample implanted with O ϩ ions through the Ti overlayer. It is somewhat different from the value reported in implanted AlGaN/GaN HFETs ͑0.71 eV͒, 12 and is probably at least partially related to the smaller band gap of the GaN. This is the highest value reported in GaN.…”

Section: Resultscontrasting

confidence: 75%

“…The damage levels created by N implantation are estimated from an Arrhenius plot of the resistance/ temperature product to be a maximum of 390 meV below the conduction band. 12 The groups of Asbeck and Lau at UCSD demonstrated that a dual energy ͑75/180 keV͒ P ϩ implant ͑doses of 5ϫ10 11 and 2 ϫ10 12 cm Ϫ2 , respectively͒, followed by a 75 keV He ϩ implant (6ϫ10 13 cm Ϫ2 ) was able to produce a sheet resistance of ϳ10 12 ⍀/ᮀ in AlGaN/GaN structures with 1 m thick undoped GaN buffers. The position of the damage level is analogous to the defect position reported for implant compensated n-type InP and InGaAs 10 but different from the damage-associated, midgap states created in GaAs and AlGaAs.…”

Section: Introductionmentioning

confidence: 99%

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Oxygen implant isolation of n-GaN field-effect transistor structures

Dang

Cao

Ren

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Multiple-energy (30-325 keV) 0+ implantation into GaN field-effect transistor structures (n -10'8 cm-3, 3000~thick) can produce as-implanted sheet resistances of 4x 10'2 Q/J, provided care is taken to ensure compensation of the region up to the projected range of the lowest energy implant. The sheet resistance remains above 107 Q/d to annealing temperatures of -650°C and displays an activation energy of 0.29 eV.No diffusion of the implanted oxygen was observed for anneals up to 800°C. /'-1-DISCLAIMER

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Section: Resultscontrasting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Oxygen implant isolation of n-GaN field-effect transistor structures

Dang

Cao

Ren

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The devices had gate lengths of 1 m, gate widths of 25 and 50 m, and a gatedrain spacing of 1 m and were isolated by employing an ion implantation process with phosphorus and helium. 5 The gate current was measured as a function of gate-drain voltage both with fixed gate-source voltages and with the source floating in order to investigate the influence of the source on the leakage in the gate-drain diode. 6 Data were obtained for temperatures ranging from 175 to 500 K, as measurement of temperature-dependent current-voltage characteristics allowed a more detailed analysis of each leakage mechanism to be performed.…”

Section: Methodsmentioning

confidence: 99%

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

Miller

Dang

2000

Journal of Applied Physics

184

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Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor ͑HFET͒ structures with conventional and polarization-enhanced barriers have been studied. Comparisons of extensive gate leakage current measurements with two-dimensional simulations show that vertical tunneling is the dominant mechanism for gate leakage current in the standard-barrier HFET and that the enhanced-barrier structure suppresses this mechanism in order to achieve a reduced leakage current. An analytical model of vertical tunneling in a reverse-biased HFET gate-drain diode is developed to evaluate the plausibility of this conclusion. The model can be fit to the measured data, but suggests that additional leakage mechanisms such as lateral tunneling from the edge of the gate to the drain or defect-assisted tunneling also contribute to the total leakage current. The vertical tunneling current mechanism is shown to be more significant to the gate leakage current in III-V nitride HFETs than in HFETs fabricated in other III-V material systems, in which the lateral tunneling current component generally dominates the gate leakage current.

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“…The O + ion implant isolation was also investigated on AlGaAs [9], InAlN [10], and GaN (n-type doping)/GaN materials [11] to study the isolation quality, and P/He, Ar + , and N + ions have been employed in AlGaN/GaN HEMTs [12]- [14].…”

mentioning

confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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Abstract-A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.

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P/He ion implant isolation technology for AlGaN/GaNHFETs

Cited by 44 publications

References 7 publications

Oxygen implant isolation of n-GaN field-effect transistor structures

Oxygen implant isolation of n-GaN field-effect transistor structures

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

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